Results 1 to 10 of about 93,151 (296)
International Journal of Automotive Science and Technology, 2022 This study was carried out to compare the Si and SiC MOSFETs in the market used on motor driver circuits. A motor driver circuit is designed to run the brushless DC motors.
Erkan Sevim, Emrah Çetin
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On-wafer wideband characterization: a powerful tool for improving the IC technologies
Journal of Telecommunications and Information Technology, 2023 In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic ...
Dimitri Lederer, Jean-Pierre Raskin
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Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
IEEE Access, 2023 After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules.
Hongwei Chen +4 more
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Advanced Intelligent Systems, 2023 Charge‐trapping tunnel field effect transistors (CT‐TFETs) are experimentally demonstrated, and their array operations are discussed for low‐power large‐scale neuromorphic applications. CT‐TFETs cointegrated with charge‐trapping metal–oxide–semiconductor
Jae Seung Woo +3 more
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Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics
IEEE Journal of the Electron Devices Society, 2022 We reported temperature-dependent narrow width effects on electrical characteristics of 28-nm CMOS transistors measured at temperature of 77 K-300 K. At cryogenic temperatures, P-MOSFETs appear to have stronger temperature-induced threshold voltage ( $V_{
Ting Tsai, Horng-Chih Lin, Pei-Wen Li
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IET Power Electronics, 2023 Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and
Bufan Shi +6 more
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Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness [PDF]
, 2002 The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched 'off' (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current ...
Knitel, M.J. +3 more
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Novel Selection Criteria of Primary Side Transistors for LLC Resonant Converters [PDF]
, 2018 This work has been supported by the Spanish Government under Project MINECO-17-DPI2016-75760-R, Project DPI2014-56358-JIN and grant FPI BES-2014-070785, and by the Principality of Asturias under Project SV-PA-17-RIS3-4 and FEDER ...
Bauwens, Filip +5 more
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The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M. +7 more
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IEEE Journal of the Electron Devices Society, 2019 In this paper, the impacts of work function variation (WFV), line-edge roughness (LER), and ferroelectric properties variation on the threshold voltage, subthreshold swing (SS), Ion, and Ioff variations are analyzed comprehensively for negative ...
Vita Pi-Ho Hu +2 more
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