Results 1 to 10 of about 3,660 (162)

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

Sensors, 2012
A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain.
Zhao Xiaofeng, Dianzhong Wen, Wen Dianzhong   +2 more
exaly   +3 more sources

Recent advances in diamond MOSFETs with normally off characteristics

Functional Diamond
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Xufang Zhang, Shuhua Wei
exaly   +2 more sources

The Performance Comparison of the SiC and Si Mosfets Used in the 3-Phase Brushless DC Motor Drives for Electric Vehicles

International Journal of Automotive Science and Technology, 2022
This study was carried out to compare the Si and SiC MOSFETs in the market used on motor driver circuits. A motor driver circuit is designed to run the brushless DC motors.
Erkan Sevim, Emrah Çetin
doaj   +1 more source

On-wafer wideband characterization: a powerful tool for improving the IC technologies

Journal of Telecommunications and Information Technology, 2023
In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic ...
Dimitri Lederer, Jean-Pierre Raskin
doaj   +1 more source

Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation

IEEE Access, 2023
After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules.
Hongwei Chen, Sheng Ai, Ziling Nie, Fengrui Cui, Pengfei Yuan   +4 more
doaj   +1 more source

Logic‐Compatible Charge‐Trapping Tunnel Field Effect Transistors for Low‐Power, High‐Accuracy, and Large‐Scale Neuromorphic Systems

Advanced Intelligent Systems, 2023
Charge‐trapping tunnel field effect transistors (CT‐TFETs) are experimentally demonstrated, and their array operations are discussed for low‐power large‐scale neuromorphic applications. CT‐TFETs cointegrated with charge‐trapping metal–oxide–semiconductor
Jae Seung Woo, Chae Lin Jung, Ki Ryung Nam, Woo Young Choi   +3 more
doaj   +1 more source

Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics

IEEE Journal of the Electron Devices Society, 2022
We reported temperature-dependent narrow width effects on electrical characteristics of 28-nm CMOS transistors measured at temperature of 77 K-300 K. At cryogenic temperatures, P-MOSFETs appear to have stronger temperature-induced threshold voltage ( $V_{
Ting Tsai, Horng-Chih Lin, Pei-Wen Li
doaj   +1 more source

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

IET Power Electronics, 2023
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and
Bufan Shi, Anna Isabel Ramones, Yingxu Liu, Haoran Wang, Yu Li, Stefan Pischinger, Jakob Andert   +6 more
doaj   +1 more source

Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs

IEEE Journal of the Electron Devices Society, 2019
In this paper, the impacts of work function variation (WFV), line-edge roughness (LER), and ferroelectric properties variation on the threshold voltage, subthreshold swing (SS), Ion, and Ioff variations are analyzed comprehensively for negative ...
Vita Pi-Ho Hu, Pin-Chieh Chiu, Yi-Chun Lu   +2 more
doaj   +1 more source

Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility

IEEE Journal of the Electron Devices Society, 2016
Deformation potential (Dac), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, back ...
Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida   +4 more
doaj   +1 more source