Results 21 to 30 of about 28,940 (205)
Challenges and Prospects of Nanoscale MOSFET Scaling: A Review
Anbar Journal of Engineering SciencesThis review surveys scaling limitations and solution strategies for nanoscale MOSFETs, including high-k dielectrics, metal gates, FinFETs, GAA devices, and beyond-CMOS technologies.
Ahmed S. Al-Jawadi +2 more
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IEEE Journal of the Electron Devices Society, 2014 This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices.
Kalyan Koley +3 more
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A comparative study of hole and electron inversion layer quantization in MOS structures [PDF]
Serbian Journal of Electrical Engineering, 2010 In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied
Chaudhry Amit, Roy Nath Jatinder
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Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs
Sensors, 2012 A biocompatible and functional interface can improve the sensitivity of bioelectronics. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the surface
Shu-Ping Lin +3 more
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Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides [PDF]
, 2000 In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale.
Kalna, K. +3 more
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IEEE AccessUsing paralleled SiC MOSFETs is an economical and commonly-used solution for high-power applications. However, the dynamic unbalanced currents during TURN-ON and TURN-OFF processes can pose the security and stability threats in the parallel connection of
Zheng Cao +3 more
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Influence and reinforcement of gate bias on total dose effect of SiC MOSFET
机车电传动, 2023 To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold ...
QIU Leshan +4 more
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High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
IEEE Journal of the Electron Devices Society, 2019 Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate.
Jiangwei Liu +3 more
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IET Power Electronics, 2022 Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly‐Si gate, resulting ...
Hengyu Yu +6 more
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Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology [PDF]
Informacije MIDEM, 2021 I. Mamatov, Y. Özçelep, F. Kaçar
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