Results 21 to 30 of about 93,151 (296)

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [PDF]

, 2003
Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems ...
Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., Slavcheva, G.   +4 more
core   +2 more sources

Challenges and Prospects of Nanoscale MOSFET Scaling: A Review

Anbar Journal of Engineering Sciences
This review surveys scaling limitations and solution strategies for nanoscale MOSFETs, including high-k dielectrics, metal gates, FinFETs, GAA devices, and beyond-CMOS technologies.
Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Najim   +2 more
doaj   +1 more source

Effect of Source/Drain Lateral Straggle on Distortion and Intrinsic Performance of Asymmetric Underlap DG-MOSFETs

IEEE Journal of the Electron Devices Society, 2014
This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices.
Kalyan Koley, Arka Dutta, Samar K. Saha, Chandan K. Sarkar   +3 more
doaj   +1 more source

A comparative study of hole and electron inversion layer quantization in MOS structures [PDF]

Serbian Journal of Electrical Engineering, 2010
In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied
Chaudhry Amit, Roy Nath Jatinder
doaj   +1 more source

Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs

Sensors, 2012
A biocompatible and functional interface can improve the sensitivity of bioelectronics. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the surface
Shu-Ping Lin, Tien-Yin Chi, Tung-Yen Lai, Mao-Chen Liu   +3 more
doaj   +1 more source

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., de Groot, C.H., Gili, E., Hakim, M.M.A., Hall, S., Kunz, D., Uchino, T.   +6 more
core   +1 more source

Influence and reinforcement of gate bias on total dose effect of SiC MOSFET

机车电传动, 2023
To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold ...
QIU Leshan, WU Zhikang, CHEN Yan, LI Chengzhan, BAI Yun   +4 more
doaj  

A Negative-Feedback Gate-Loop for Current Balancing Paralleled SiC MOSFETs Based on a Differential Mode Inductor

IEEE Access
Using paralleled SiC MOSFETs is an economical and commonly-used solution for high-power applications. However, the dynamic unbalanced currents during TURN-ON and TURN-OFF processes can pose the security and stability threats in the parallel connection of
Zheng Cao, Ruihong Zhang, Shaocong Wang, E. Peng   +3 more
doaj   +1 more source

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

IET Power Electronics, 2022
Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly‐Si gate, resulting ...
Hengyu Yu, Jun Wang, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu, Bing Ji, Z. John Shen   +6 more
doaj   +1 more source

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter [PDF]

, 2002
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter.
Asenov, A., Brown, A.R., Watling, J.R.
core   +1 more source