Results 21 to 30 of about 3,660 (162)

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology [PDF]

Informacije MIDEM, 2021
I. Mamatov, Y. Özçelep, F. Kaçar
doaj   +1 more source

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate.
Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source

Electrically Active Defects in SiC Power MOSFETs

Energies, 2023
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric.
Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors
Kang Hong, Xiao-Yuan Chen, Yu Chen, Ming-Shun Zhang, Jia-Lei Wang, Shan Jiang, Zhou Pang, Han-Mei Yang, Ning Xue, Hua-Yu Gou, Lei Zeng   +10 more
doaj   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Boron-doped diamond MOSFETs operating at temperatures up to 400°C

Functional Diamond
The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C.
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

IEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

IEEE Access, 2021
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation.
Uchechukwu A. Maduagwu, Viranjay M. Srivastava   +1 more
doaj   +1 more source

Conjugated Metal‐Organic Frameworks on Laser‐Induced‐Graphene Scaffold Enable Picomolar Sensitivity in Electrical Biosensors

Advanced Materials Interfaces, EarlyView.
A controlled layer‐by‐layer growth process integrates conjugated metal‐organic framework thin films onto a hierarchical 3D laser‐induced graphene scaffold. When incorporated into an extended‐gate field‐effect transistor configuration, this synergistic hybrid platform achieves robust aptamer immobilization, driving highly selective, picomolar‐level ...
Khanh T. M. Le, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +2 more
wiley   +1 more source