Results 41 to 50 of about 93,151 (296)

Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

IEEE Access, 2021
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation.
Uchechukwu A. Maduagwu, Viranjay M. Srivastava   +1 more
doaj   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

High-temperature instability processes in SOI structures and MOSFETs

Journal of Telecommunications and Information Technology, 2001
The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ...
Alexei N. Nazarov, V. I. Kilchytska, Ja. N. Vovk, J. P. Colinge   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Thermal behavior and switching losses of MOSFET in high-frequency transformer circuits

Case Studies in Thermal Engineering
The rapid development of semiconductor technology has increased attention to heat generation in electronic components, particularly in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), which are key elements in modern power circuits.
Jiale Cheng, Yinghao Zhang, Xiangqun Cheng, Kaixin Guo, Yuchen Wang, Mian Jiang, Yabin Wang, Yang Liu   +7 more
doaj   +1 more source

Activation mechanisms in sodium-doped Silicon MOSFETs

, 2007
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and ...
Barnes, C. H. W., Ferrus, T., George, R., Lumpkin, N., Paul, D. J., Pepper, M.   +5 more
core   +1 more source

Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations [PDF]

, 2007
This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs.
Esseni, David, Hueting, Raymond J.E., Palestri, Pierpalo, Selmi, Luca, Steen, Jan-Laurens P.J. van der   +4 more
core   +3 more sources

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE Journal of the Electron Devices Society, 2020
2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions.
Aditi Agarwal, Kijeong Han, B. Jayant Baliga   +2 more
doaj   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

Advanced Materials Interfaces, EarlyView.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan, Michael Stöger‐Pollach, Georg Pfusterschmied, Ulrich Schmid   +3 more
wiley   +1 more source