Results 41 to 50 of about 3,660 (162)

Comparative research on heavy ion irradiation effects of MOSFETs with different structures

AIP Advances
In a complex space environment, high-energy ions can cause radiation damage effects on MOSFETs, leading to functional errors and even permanent damage. This study uses the finite element method to establish floating-body MOSFETs with bulk silicon, PDSOI,
Jiaxin Wei, Jianhong Hao, Qiang Zhao, Jieqing Fan, Fang Zhang, Ke Li, Zhiwei Dong   +6 more
doaj   +1 more source

Active Autonomous Open-Loop Technique for Static and Dynamic Current Balancing of Parallel-Connected Silicon Carbide MOSFETs

Energies, 2023
Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in power electronics applications of medium- and high-power density. Usually, SiC MOSFETs are connected in parallel to increase power rating.
Nektarios Giannopoulos, Georgios Ioannidis, Georgios Vokas, Constantinos Psomopoulos   +3 more
doaj   +1 more source

Receptogenesis in a Vascularized Robotic Embodiment

Advanced Science, EarlyView.
Functional augmentation of situated robots via ex novo hardware generation extends physical adaptability. Drawing inspiration from open circulatory systems for mass and function redistribution, this study presents a vascularized robotic composite exhibiting receptogenesis ‐ the on‐demand construction of sensors ‐ from internal fluid reserves based on ...
Kadri‐Ann Pankratov, Leonid Zinatullin, Hans Priks, Adele Metsniit, Urmas Johanson, Tarmo Tamm, Alvo Aabloo, Edoardo Sinibaldi, Indrek Must   +8 more
wiley   +1 more source

Neuromorphic Devices and Computing for Sensing, Memory, and Control

Advanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu, Nicholas Schaffer, Xiao Yang   +2 more
wiley   +1 more source

Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs

Nanoscale Research Letters, 2021
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia, Haodong Hu, Genquan Han, Yan Liu, Yue Hao   +4 more
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Review of Voltage Balancing Techniques for Series-Connected SiC Metal–Oxide–Semiconductor Field-Effect Transistors

Energies
Power devices in series are low-voltage power devices used in medium- and high-voltage applications in a more direct program. However, when power devices in series are used, because of their electrical performance parameters or external circuit ...
Lucheng Sun, Mingzhong Qiao, Yihui Xia, Bo Wu, Fulin Chen   +4 more
doaj   +1 more source