SiGe p-channel MOSFETs with tungsten gate [PDF]
A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 μm resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium ...
Wilkinson, C.D.W. +5 more
core +2 more sources
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation.
Uchechukwu A. Maduagwu +1 more
doaj +1 more source
Gate‐Induced Critical Current Modulation in W–C Nanowires: The Role of Fabrication
Focused ion beam induced deposition (FIBID) enables precise control of superconducting W–C nanowire devices. Introducing a Ga+ focused ion beam (FIB) cleaning step reduces substrate damage and suppresses leakage currents, shifting gating thresholds to higher voltages.
Alba Arroyo‐Fructuoso +2 more
wiley +1 more source
Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks [PDF]
Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths
Watling, J. R. +14 more
core +1 more source
Programmable Pneumatic Actuator System for a Bioinspired Artificial Colon
A modular soft robotic colon simulator driven by programmable pneumatic actuation is developed to mimic physiological and pathological‐like motility patterns of the large intestine. Finite element–guided design and distributed control enable anatomically realistic deformation for peristalsis, segmentation, and mass movements, supporting capsule ...
Andrew Bickerdike +6 more
wiley +1 more source
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Khan, Khalid Saeed +15 more
core +2 more sources
Thermal behavior and switching losses of MOSFET in high-frequency transformer circuits
The rapid development of semiconductor technology has increased attention to heat generation in electronic components, particularly in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), which are key elements in modern power circuits.
Jiale Cheng +7 more
doaj +1 more source
2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions.
Aditi Agarwal +2 more
doaj +1 more source
Modular, Textile‐Based Soft Robotic Grippers for Agricultural Produce Handling
This article introduces textile‐based pneumatic grippers that transform simple textiles into robust bending actuators. Detailed experiments uncover how cut geometry and fabric selection shape performance. Successful handling of fragile agricultural items showcases the potential of textile robotics for safe, scalable automation in food processing and ...
Zeyu Hou +4 more
wiley +1 more source
Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems
This study examines the reliability of several electronic components in a Vienna Rectifier configuration, which is a critical topology for power conversion systems.
Bharaneedharan Balasundaram +4 more
doaj +1 more source

