Results 51 to 60 of about 93,151 (296)

Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems

IEEE Access
This study examines the reliability of several electronic components in a Vienna Rectifier configuration, which is a critical topology for power conversion systems.
Bharaneedharan Balasundaram, P. Suresh, Parvathy Rajendran, It Ee Lee, C. Ahamed Saleel   +4 more
doaj   +1 more source

Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor

IET Science, Measurement & Technology, 2021
This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS‐MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and ...
Shashi Kumar, Gaddiella Diengdoh Ropmay, Pradeep Kumar Rathore, Peesapati Rangababu, Jamil Akhtar   +4 more
doaj   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

Advanced Materials Interfaces, EarlyView.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk, Michał Suplewski, Jacek Łubiński, Jakub Gierowski, Monika Kosowska, Mirosław Sawczak, Mattia Pierpaoli, Filip Janiak, Małgorzata Szczerska   +8 more
wiley   +1 more source

Active Autonomous Open-Loop Technique for Static and Dynamic Current Balancing of Parallel-Connected Silicon Carbide MOSFETs

Energies, 2023
Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in power electronics applications of medium- and high-power density. Usually, SiC MOSFETs are connected in parallel to increase power rating.
Nektarios Giannopoulos, Georgios Ioannidis, Georgios Vokas, Constantinos Psomopoulos   +3 more
doaj   +1 more source

Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs [PDF]

, 2006
In this work, we analyzed the subthreshold current (I/sub D/) of pocket implanted MOSFETs using extensive device simulations and experimental data. We present an analytical model for the subthreshold current applicable for any type of FET and show that ...
Heringa, Anco, Hueting, R.J.E.
core   +2 more sources

Characterization and Design Framework for Micro‐ and Nanoscale Printed Metal Interconnects in Hybrid Electronic Systems

Advanced Materials Technologies, EarlyView.
This work establishes a framework for high‐resolution printed interconnects by coupling e‐jet printing control, multilayer deposition, and sintering optimization. Ink properties and printing speed influence particle stacking, while different sintering atmospheres drive distinct microstructural evolution.
Kaifan Yue, Siddharth Kurup, Rebecca Banner, Calib Lanier, Eric Vogel, Michael Filler, Kira Barton   +6 more
wiley   +1 more source

Comparative research on heavy ion irradiation effects of MOSFETs with different structures

AIP Advances
In a complex space environment, high-energy ions can cause radiation damage effects on MOSFETs, leading to functional errors and even permanent damage. This study uses the finite element method to establish floating-body MOSFETs with bulk silicon, PDSOI,
Jiaxin Wei, Jianhong Hao, Qiang Zhao, Jieqing Fan, Fang Zhang, Ke Li, Zhiwei Dong   +6 more
doaj   +1 more source

Simplified dc to dc converter [PDF]

, 1984
A dc to dc converter which can start with a shorted output and which regulates output voltage and current is described. Voltage controlled switches directed current through the primary of a transformer the secondary of which includes virtual reactance ...
Gruber, R. P.
core   +1 more source

Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks [PDF]

, 2004
Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths
Adam-Lema, F., Asenov, A., Barker, J. R., Watling, J. R., Yang, L.   +4 more
core   +1 more source

Smart Closed‐Loop Systems in Personalized Healthcare: Advances and Outlook

Advanced Materials Technologies, EarlyView.
A smart closed‐loop e‐textile integrates multimodal sensing, onboard processing, wireless communication, and wearable power to enable real‐time physiological/biochemical monitoring and feedback‐controlled therapy. ABSTRACT Smart textiles represent a revolutionary frontier in healthcare, seamlessly blending fabric and advanced technologies to create ...
Safoora Khosravi, Sang Won Lee, Mohammad Abrar Uddin, Sina Hassanpoor, Neha Suvindran, Katherine Le, Harun Arkaz, Harishkumar Narayana, Saeid Soltanian, Danial Khorsandi, Negar Hosseinzadeh Kouchehbaghi, Taeil Kim, Yangzhi Zhu   +12 more
wiley   +1 more source