Results 51 to 60 of about 3,660 (162)

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

Advanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli   +7 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices

Results in Physics
Two-dimensional (2D) materials have recently emerged as a pivotal force in the advancement of semiconductor technology, particularly as Moore’s law approaches its physical limits.
Jia-Yi Li, Xia-Fei Lei, Yong Zhang, Shi-Zhang Chen, Jing Feng, Xi Wu, Bo Chen, Feng Ning   +7 more
doaj   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

Advanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

Temperature‐Tunable Cholesteric Liquid Crystal Optical Combiners for Extended Reality Applications

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
Recent advancements in extended reality highlight their potential to enhance traditional displays like liquid crystal displays and organic light‐emitting diode screens. This article introduces an innovative cholesteric liquid crystal‐based optical combiner for head‐mounted displays, enabling seamless transitions between augmented reality, virtual ...
Yuanjie Xia, Haobo Li, Marija Vaskeviciute, Daniele Faccio, Affar S. Karimullah, Hadi Heidari, Rami Ghannam   +6 more
wiley   +1 more source

Thermal Analysis and Switching Performance of a 1.7 kV SiC Power MOSFET Under High-Frequency Operation and Double Pulse Testing

IEEE Access
This study presents a comprehensive simulation analysis of 1.7 kV SiC Power MOSFETs (SiC) compared to conventional Si power MOSFETs (Si1 and Si2) focusing on thermal behavior, switching performance, and efficiency under various operating conditions ...
Muhammad Najmi Seth, Nurul Amirah Zulkifle, Nur Syamimi Noorasid, Ghazali Omar, Ahmad Nizamuddin, Faiz Arith   +5 more
doaj   +1 more source

Effect of gamma ray absorbed dose on the FET transistor parameters

Results in Physics, 2016
This article tries to explain a modified method on dosimetry, based on electronic solid state including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose, behavior of two models of MOSFETs has been studied as a function of the
Baharak Eslami, Saleh Ashrafi
doaj   +1 more source

Bronchoscopy Robot with Enhanced Flexibility and Stability via Multi‐Segment Variable Stiffness Catheter

Advanced Intelligent Systems, EarlyView.
This work presents a magnetic bronchoscopy robot with a novel multi‐segment variable stiffness catheter. This catheter can not only move flexibly in the narrow bronchi but also harden according to the need to provide support. Combined with remote wireless magnetic field drive, it provides a more precise and effective solution for biopsy of deep lung ...
Shucong Yin, Bin Huang, Shiyuan Dong, Junhao Wang, Liangshen Zhao, Yang Yang, Bingkun Bao, Hongen Liao, Fang Chen, Tianqi Huang, Boyu Zhang   +10 more
wiley   +1 more source

Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization

Advanced Intelligent Systems, EarlyView.
Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee, Jun‐Young Park, Joon‐Kyu Han, Sungho Kim   +3 more
wiley   +1 more source