Results 71 to 80 of about 21,543 (210)

Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation

open access: yes, 2006
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, P.   +5 more
core  

Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs

open access: yes, 2011
The electron mobility in Al2O3/InxGa1-xAs (x = 0.53, 0.65, or 0.75) metal-oxide-semiconductor field-effect transistors was analyzed for scattering by oxide charge, as well as interface charge and roughness, and compared with measured transfer ...
Xuan, Yi   +7 more
core   +1 more source

Thermal Operational Stability in Organic Thin Film Transistors: The Critical Role of Interface Composition and Deposition Conditions

open access: yesSmall Methods, EarlyView.
Operational thermal stability in organic thin‐film transistors is engineered through interfacial chemistry and deposition temperature. By pairing F10‐SiPc with different surface treatments and tuning substrate temperature during deposition, distinct transport regimes emerge, ranging from crystalline, trap‐prone behavior to reversible, thermally ...
Forest St‐Denis‐Weintrager   +6 more
wiley   +1 more source

An Innovative Approach to Multi‐Valued Logic

open access: yesIEEJ Transactions on Electrical and Electronic Engineering, EarlyView.
The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley   +1 more source

Electrical Characteristics of Single, Double and Surround Gate Vertical MOSFETs with Reduced Overlap Capacitance

open access: yes, 2003
The vertical MOSFET structure is one of the solutions for reducing the channel length of devices under 50nm. Surround gate structures can be realised which offer improved short channel effects and more channel with per unit silicon area. In this paper, a
Uchino, T   +6 more
core  

AI‐enabled bumpless transfer control strategy for legged robot with hybrid energy storage system

open access: yesCAAI Transactions on Intelligence Technology, EarlyView.
Abstract Designing Hybrid energy storage system (HESS) for a legged robot is significant to improve the motion performance and energy efficiency of the robot. However, switching between the driving mode and regenerative braking mode in the HESS may generate a torque bump, which has brought significant challenges to the stability of the robot locomotion.
Zhiwu Huang   +6 more
wiley   +1 more source

Comparison of Dielectric Recovery After Arc Burning in SF6 Gas and Its Potential Alternatives

open access: yesHigh Voltage, EarlyView.
ABSTRACT Although sulphur hexafluoride (SF6) exhibits exceptional insulating properties, it is a potent greenhouse gas. Therefore, studying alternatives to SF6 is critical for developing environmentally friendly high‐voltage electrical equipment.
Ziqi Liu   +4 more
wiley   +1 more source

Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation

open access: yes, 2006
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, Peter   +5 more
core  

Dosimetric comparison of FF and FFF modes under non‐ideal bolus‐fitting conditions for post‐mastectomy chest wall irradiations

open access: yesJournal of Applied Clinical Medical Physics, Volume 27, Issue 6, June 2026.
Abstract Background In post‐mastectomy radiotherapy, tissue‐equivalent bolus is routinely used to ensure adequate skin dose. However, achieving perfect contact on curved chest walls is challenging, often resulting in non‐uniform air gaps. With the increasing adoption of Flattening Filter‐Free (FFF) beams, it is crucial to understand how their distinct ...
Long‐Gang Gui, Yin Poo
wiley   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

open access: yesAdvanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan   +3 more
wiley   +1 more source

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