Results 71 to 80 of about 28,940 (205)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]

, 2008
The first demonstration of implant-free, flatband-mode In_0.75Ga_0.25As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J., Ignatova, O., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Fejes, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., Gili, E., Kunz, D., Hakim, M.M.A., Uchino, T., Hall, S., de Groot, C.H.   +6 more
core   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices

Results in Physics
Two-dimensional (2D) materials have recently emerged as a pivotal force in the advancement of semiconductor technology, particularly as Moore’s law approaches its physical limits.
Jia-Yi Li, Xia-Fei Lei, Yong Zhang, Shi-Zhang Chen, Jing Feng, Xi Wu, Bo Chen, Feng Ning   +7 more
doaj   +1 more source

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration

Advanced Electronic Materials, EarlyView.
This review surveys organic electrochemical transistors as core building blocks for energy‐autonomous bio‐integrated electronics. We outline device physics, OMIEC materials, and electrolyte effects that enable sub‐volt, high‐gain operation, and discuss direct coupling with mechanical, thermal, and optical energy harvesters to realize battery‐free ...
Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim   +3 more
wiley   +1 more source

Thermal Analysis and Switching Performance of a 1.7 kV SiC Power MOSFET Under High-Frequency Operation and Double Pulse Testing

IEEE Access
This study presents a comprehensive simulation analysis of 1.7 kV SiC Power MOSFETs (SiC) compared to conventional Si power MOSFETs (Si1 and Si2) focusing on thermal behavior, switching performance, and efficiency under various operating conditions ...
Muhammad Najmi Seth, Nurul Amirah Zulkifle, Nur Syamimi Noorasid, Ghazali Omar, Ahmad Nizamuddin, Faiz Arith   +5 more
doaj   +1 more source

Effect of gamma ray absorbed dose on the FET transistor parameters

Results in Physics, 2016
This article tries to explain a modified method on dosimetry, based on electronic solid state including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose, behavior of two models of MOSFETs has been studied as a function of the
Baharak Eslami, Saleh Ashrafi
doaj   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

Advanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte, Salvatore Ethan Panasci, Valerio Votadoro, Salvatore Di Franco, Marilena Vivona, Simone Milazzo, Marco Zignale, Filippo Giannazzo, Béla Pécz, Patrick Fiorenza   +9 more
wiley   +1 more source