Results 71 to 80 of about 93,151 (296)

Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS

Advanced Science, EarlyView.
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun, Miji Kim, Wooyeon Shin, Yongjun Park, Kanghwan Kim, Il‐Joo Cho, Jae Won Shim, Min Soo Kim, Sunwoo Lee, Jeongjin Kim, Changhyuk Lee   +10 more
wiley   +1 more source

Engineering Nanowire n-MOSFETs at Lg < 8 nm

, 2013
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than ...
Kim, SungGeun, Klimeck, Gerhard, Kubis, Tillmann, Lundstrom, Mark, Mehrotra, Saumitra, Povolotskyi, Michael   +5 more
core   +1 more source

Physical Implementation of Optical Material‐Based Neural Networks Processing Enabled by Long‐Persistent Luminescence

Advanced Science, EarlyView.
This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley   +1 more source

Review of Voltage Balancing Techniques for Series-Connected SiC Metal–Oxide–Semiconductor Field-Effect Transistors

Energies
Power devices in series are low-voltage power devices used in medium- and high-voltage applications in a more direct program. However, when power devices in series are used, because of their electrical performance parameters or external circuit ...
Lucheng Sun, Mingzhong Qiao, Yihui Xia, Bo Wu, Fulin Chen   +4 more
doaj   +1 more source

A highly efficient power block with series connection of power SiC MOSFETs‐design, characterization and assessment in MV converters

IET Power Electronics, 2022
Implementation of the series connection of the SiC MOSFETs in medium voltage (MV) high power converters faces a series of challenges, including the electrical/thermal stress imbalance, insulation coordination design, high dv/dt elimination and robustness
Chengmin Li, Zhebie Lu, Ankang Zhu, Chushan Li, Haoze Luo, Wuhua Li, Xiangning He   +6 more
doaj   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]

, 2008
We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
, , Franck Corbière, Frédéric Bernard, Guy Rolland, Nicolas Huger, Olivier Saint-Pé, Pierre Magnan, Vincent Goiffon   +8 more
core   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

Variation of the hopping exponent in disordered silicon MOSFETs

, 2008
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET.
C H W Barnes, D J Paul, Efros A L, Ferrus T, M Pepper, Mott N F, N Lumpkin, Nguyen V L, Nguyen V L, Pepper M, R George, Shklovskii B I, Shklovskii B I, Shklovskii B I, Shklovskii B I, T Ferrus   +15 more
core   +1 more source

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]

, 2005
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Asenov, A., Brown, A.R., Cheng, B., Roy, S., Samsudin, K.   +4 more
core   +1 more source