Results 91 to 100 of about 28,940 (205)

An Intelligent Piezoelectric System Integrating Self‐Sensing and Autonomous Operation for Adaptive Vibration Control

open access: yesAdvanced Intelligent Systems, EarlyView.
An intelligent piezoelectric vibration control system integrating self‐sensing, autonomous operation, and adaptive bias‐flip synchronized switching damping (SSD) is developed. The system detects vibration extrema, executes synchronized switching control, and autonomously establishes the bias voltage without external sensing instruments, achieving ...
Hao Tang, Weiqun Liu, Guobiao Hu
wiley   +1 more source

Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. [PDF]

open access: yes, 2011
In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In<sub>0.53</sub>Ga<sub>0.47</sub>As channel devices employing an Atomic Layer Deposited (ALD) Al<sub&
Bentley, Steven J.   +37 more
core   +1 more source

Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

open access: yesFunctional Diamond
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj   +1 more source

Polarization‐Dependence of Nonlinear Optical Effects in Silicon: The Case of Ultrafast Processing

open access: yesAdvanced Physics Research, EarlyView.
The dependence of the input polarization for the nonlinear optical propagation in silicon is investigated theoretically and experimentally. The perturbative regime is examined using pump‐probe shadowgraphy and nonlinear transmission, whereas the case of permanent laser‐induced modifications is addressed using a combination of Raman micro‐spectroscopy ...
Namig Alasgarzade   +6 more
wiley   +1 more source

Heterostructured Semiconductors for Advanced Chemical and Biochemical Sensors: From Gas Sensors to Electrolyte‐Gated Transistors

open access: yesAdvanced Physics Research, EarlyView.
Heterostructured semiconductors enable synergistic interactions between complementary materials, improving charge transport, analyte adsorption, and signal transduction in chemical and biochemical sensors. Their integration allows for high sensitivity, selectivity, stability, and low‐power operation across gas and liquid‐phase devices, while novel ...
Martin Schwellberger Barbosa   +2 more
wiley   +1 more source

Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation

open access: yes, 2006
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, Peter   +5 more
core   +1 more source

Recent advances in diamond MOSFETs with normally off characteristics

open access: yesFunctional Diamond
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li   +7 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam   +3 more
wiley   +1 more source

Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts

open access: yesElectron, EarlyView.
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang   +7 more
wiley   +1 more source

Compact modelling in RF CMOS technology [PDF]

open access: yes, 2011
With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
core   +2 more sources

Home - About - Disclaimer - Privacy