Results 91 to 100 of about 3,660 (162)

Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets

Applied Physics Express
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober to ...
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori   +9 more
doaj   +1 more source

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IEEE Journal of the Electron Devices Society
The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki   +5 more
doaj   +1 more source

Enhanced Transport in Organic Semiconductors Mediated Through Interfacial Charge Transfer and Cooperative Strong Coupling

Nanophotonics, Volume 15, Issue 14, 27 July 2026.
Here, we experimentally demonstrate the effect of cooperative strong coupling to improve the electron mobility of an organic semiconductor. This is achieved by strong coupling between a highly absorbing organic dye and an organic semiconductor in a MOSFET cavity configuration. Our findings suggest the flexibility of applying cooperative strong coupling
Kuljeet Kaur, Nitin Yadav, Shashi Kumari, Jino George   +3 more
wiley   +1 more source

Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip

Applied Physics Express
400 metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a half-inch diamond substrate. The performance of each device was evaluated, and an H-terminated diamond MOSFET chip was created by connecting over 300 of the well ...
Keita Takaesu, Daisuke Sano, Iku Ota, Keiko Otsuka, Daisuke Takeuchi, Toshiharu Makino, Hitoshi Umezawa   +6 more
doaj   +1 more source

Discussion and prospects of active gate driver technology for SiC devices

机车电传动
Silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFETs) exhibit outstanding advantages in high-frequency, high-temperature, high-voltage, and high-current applications due to their superior performance.
HU Runchen, WANG Jiayi, LUO Xiang, LI Menghao, ZHANG Jianliang, HU Sideng   +5 more
doaj  

A First-Principles Study of Monolayer B₄Cl₄: Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub‑5 nm MOSFETs. [PDF]

ACS Omega
Li Z, Zhang Z, Liang S, Wang X, Han J.
europepmc   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source

Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study. [PDF]

ACS Omega
Zhang S, Guo Z, Shen Q, Du S, Xie H, Yin WY.   +5 more
europepmc   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction. [PDF]

Entropy (Basel)
Kumar S, Allard B, Hologne-Carpentier M, Clerc G, Auger F.   +4 more
europepmc   +1 more source