Results 91 to 100 of about 93,151 (296)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Metallic behavior and related phenomena in two dimensions

, 2000
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field.
Abrahams, E., Abrahams, E., Altshuler, B. L., Altshuler, B. L., Belitz, D., Belitz, D., Benenti, G., Bishop, D. J., Bishop, D. J., Brunthaler, G., Castellani, C., Castellani, C., Castellani, C., Ceperley, D. M., Chakravarty, S., Chakravarty, S., Chui, S. T., Coleridge, P. T., Das Sarma, S., Das Sarma, S., Denteneer, P. J. H., Dobrosavljević, V., Dolan, G. J., Dolgopolov, V. T., Dolgopolov, V. T., Dultz, S. C., Dultz, S. C., D’Iorio, M., Efros, A. L., Elihu Abrahams, Feng, X. G., Finkelstein, A. M., Glozman, I., Gold, A., Goldman, A. M., Hamilton, A. R., Hanein, Y., Hanein, Y., Hanein, Y., Hanein, Y., He, S., Heemskerk, R., Ilani, S., Jiang, H. W., Kelly, M. J., Khmelnitskii, D. E., Khondaker, S. I., Kirkpatrick, T. R., Kirkpatrick, T. R., Kivelson, S. A., Klapwijk, T. M., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Kravchenko, S. V., Lam, J., Laughlin, R. B., Leadbeater, M., Lee, P. A., Mason, W., Meir, Y., Mertes, K. M., Mertes, K. M., Mills, Jr., A. P., Myriam P. Sarachik, Okamoto, T., Papadakis, S. J., Papadakis, S. J., Papadakis, S. J., Phillips, P., Pikus, F. G., Popović, D., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Pudalov, V. M., Ren, Y., Ribeiro, E., Sarachik, M. P., Sarachik, M. P., Senz, V., Senz, V., Sergey V. Kravchenko, Shahar, D., Shahar, D., Shashkin, A. A., Shashkin, A. A., Shashkin, A. A., Shepelyansky, D. L., Si, Q., Simmons, M. Y., Simmons, M. Y., Simonian, D., Simonian, D., Sondhi, S. L., Tanatar, B., Thakur, J. S., Uren, M. J., Vitkalov, S. A., Wei, H. P., Yaish, Y., Yazdani, A., Yoon, J., Yoon, J.   +111 more
core   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

Advanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

Active voltage balancing by turn‐off delays regulation for multiple series‐connected SiC MOSFETs

IET Power Electronics
SiC MOSFETs are currently the most appropriate solution for high‐efficiency conversions at low kilovolts (
Cédric Mathieu de Vienne, Pierre Lefranc, Pierre‐Olivier Jeannin, Bruno Lefebvre, Besar Asllani   +4 more
doaj   +1 more source

Visualisation Techniques for Random Telegraph Signals in MOSFETs [PDF]

, 2004
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced.
Hoekstra, Erik, Klumperink, Eric A.M., Kolhatkar, Jay, Nauta, Bram, Wel, Arnoud P. van der   +4 more
core   +2 more sources

Metal Insulator transition at B=0 in p-SiGe

, 1997
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that ...
A. Gold, A. M. Finkel’stein, A. Yazdani, C. J. Emeleus, D. Popovic, D. Simonian, E. Abrahams, E. Basaran, F. F. Fang, F. Stern, J. Lam, M. D’Iorio, P. T. Coleridge, P. T. Coleridge, P. T. Coleridge, P. T. Coleridge, P. Zawadzki, R. L. Williams, S. Hikami, S. V. Kravchenko, S. V. Kravchenko, V. Dobrosavljevic, V. M. Pudalov, W. Mason, Y. Feng   +24 more
core   +1 more source

Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET [Mar 02 481-489] [PDF]

, 2015
Anisur Rahman, Mark Lundstrom
openalex   +1 more source

A Study on Flying Capacitor Linear Amplifier Configured by Only N-channel MOSFETs

, 2021
Hidemine Obara, Keiichi Matsushima
openalex   +2 more sources