Results 91 to 100 of about 28,940 (205)
An intelligent piezoelectric vibration control system integrating self‐sensing, autonomous operation, and adaptive bias‐flip synchronized switching damping (SSD) is developed. The system detects vibration extrema, executes synchronized switching control, and autonomously establishes the bias voltage without external sensing instruments, achieving ...
Hao Tang, Weiqun Liu, Guobiao Hu
wiley +1 more source
Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. [PDF]
In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In<sub>0.53</sub>Ga<sub>0.47</sub>As channel devices employing an Atomic Layer Deposited (ALD) Al<sub&
Bentley, Steven J. +37 more
core +1 more source
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj +1 more source
Polarization‐Dependence of Nonlinear Optical Effects in Silicon: The Case of Ultrafast Processing
The dependence of the input polarization for the nonlinear optical propagation in silicon is investigated theoretically and experimentally. The perturbative regime is examined using pump‐probe shadowgraphy and nonlinear transmission, whereas the case of permanent laser‐induced modifications is addressed using a combination of Raman micro‐spectroscopy ...
Namig Alasgarzade +6 more
wiley +1 more source
Heterostructured semiconductors enable synergistic interactions between complementary materials, improving charge transport, analyte adsorption, and signal transduction in chemical and biochemical sensors. Their integration allows for high sensitivity, selectivity, stability, and low‐power operation across gas and liquid‐phase devices, while novel ...
Martin Schwellberger Barbosa +2 more
wiley +1 more source
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, Peter +5 more
core +1 more source
Recent advances in diamond MOSFETs with normally off characteristics
Diamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li +7 more
doaj +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang +7 more
wiley +1 more source
Compact modelling in RF CMOS technology [PDF]
With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
core +2 more sources

