Results 91 to 100 of about 21,543 (210)

Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric.

, 2002
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core  

Utilising power devices below 100 K to achieve ultra-low power losses [PDF]

One of the main trend in the development of high power electric machines (motors, generators) is to replace the magnetic components with superconducting wires, this inevitably leads to a critical requirement from the industry (Converteam) to operate ...
Leong, Kennith Kin
core  

A First-Principles Study of Monolayer B₄Cl₄: Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub‑5 nm MOSFETs. [PDF]

ACS Omega
Li Z, Zhang Z, Liang S, Wang X, Han J.
europepmc   +1 more source

A magnetically isolated gate driver for high-speed voltage sharing in series-connected MOSFETs

, 2011
A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads.
McNeill, Neville, Grant, Duncan, Anthony, Philip, Hearn, George, Holliday, Derrick   +4 more
core  

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source

Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process

, 2004
Enhanced performance is demonstrated from a buried, compressively strained-Si0.7Ge0.3 p-MOSFET fabricated on a relaxed Si0.85Ge0.15 using a high thermal budget 0.25 µm CMOS process.
Zhang, Jing, Cerrina, Claudia, Paul, Douglas J., Temple, Matthew P., Li, Xiabbing, Olsen, Sarah H., Tang, Yue T., Evans, Alan G.R., O’Neill, Anthony G., Waite, Andrew M.   +9 more
core  

Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study. [PDF]

ACS Omega
Zhang S, Guo Z, Shen Q, Du S, Xie H, Yin WY.   +5 more
europepmc   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction. [PDF]

Entropy (Basel)
Kumar S, Allard B, Hologne-Carpentier M, Clerc G, Auger F.   +4 more
europepmc   +1 more source

Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]

Adv Mater
Cheong S, Lee SH, Han J, Park JY, Shin DH, Jang YH, Shim SK, Kim S, Hwang CS, Han JK.   +9 more
europepmc   +1 more source