Results 111 to 120 of about 21,543 (210)

Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]

Micromachines (Basel)
Dhyani M, Singh S, Tzhayek N, Bernstein JB.   +3 more
europepmc   +1 more source

Study of 3C-SiC Power MOSFETs. [PDF]

Micromachines (Basel)
Fardi H.
europepmc   +1 more source

Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide. [PDF]

Nat Commun
Yang X, Porter M, Qin Y, Yang Z, Gong H, Jin L, Xi Z, Wang H, Zhu L, Zhang Y, Shao L.   +10 more
europepmc   +1 more source

Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]

Sensors (Basel)
Górecki K, Posobkiewicz K.
europepmc   +1 more source

<i>Ab initio</i> quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics. [PDF]

RSC Adv
Ghafoor M, Khan R, Din SU, Safeen A, Li Q, Yang X, Yang Z, Lu J.   +7 more
europepmc   +1 more source

A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler. [PDF]

Microsyst Nanoeng
Kwak B, Cho Y, Han C, Lee J, Kim S, Shin Y, Choi J, Kim D, Lee SJ, Lee S, Kim HM, Shin W, Kwon D.   +12 more
europepmc   +1 more source

An Analytic Compact Model for P-Type Quasi-Ballistic/Ballistic Nanowire GAA MOSFETs Incorporating DIBL Effect. [PDF]

Nanomaterials (Basel)
Cheng H, Yang Z, Zhang C, Zhang Z.
europepmc   +1 more source

A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection. [PDF]

Nat Commun
Karl A, Verdianu A, Waldhoer D, Knobloch T, Kurzweil J, Bahrami M, Davoudi MR, Khakbaz P, Stampfer B, Sattari-Esfahlan SM, Illarionov Y, Nazir A, Liu C, Zheng Y, Pettorosso L, Polyushkin D, Müller T, Das S, Wang XR, Tang J, Zhang Y, Tan C, Li Y, Peng H, Waltl M, Grasser T.   +25 more
europepmc   +1 more source

Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes. [PDF]

Micromachines (Basel)
Liu L, Pang B, Li S, Zhen Y, Li G.
europepmc   +1 more source

Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]

Micromachines (Basel)
Li Q, Zhang Y, Huang B, Zhang W, Chen C, Lei J, Zhang D, Min R, Tong Q.   +8 more
europepmc   +1 more source