Results 121 to 130 of about 93,151 (296)
This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail +9 more
wiley +1 more source
Development of statistical model for baseband MOSFETs [PDF]
Guan Hui Lim
openalex +1 more source
ABSTRACT This study investigates the thermal performance of innovative biphilic boiling surfaces designed for CPU cooling applications using a two‐phase closed thermosyphon (TPCT) system. The surfaces were fabricated by applying composite coatings—comprising epoxy resin and diatomite particles functionalized with APTES and PFOTS silanes— onto Al1050 ...
José Pereira +3 more
wiley +1 more source
Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon.
Meiyong Liao +2 more
doaj +1 more source
High frequency noise in deep-submicrometer silicon mosfets [PDF]
Haibin Su
openalex +1 more source
Organic neuromorphic electronics powering intelligent sensory and edge computing systems
Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo +5 more
wiley +1 more source
A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding +7 more
wiley +1 more source
ABSTRACT In the present study, we have analyzed the growth profile of ruthenium (Ru) thin films, deposited using pulsed direct current (DC) magnetron sputtering technique, by varying the sputtering voltages in the range of 150–420 V. The grazing incidence X‐ray reflectivity (GIXRR), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and atomic ...
Shruti Gupta +6 more
wiley +1 more source
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, P. +5 more
core
Measurement of Electrical Potential of Plant Surface Using MOSFET by Channel Chopping Method.
Yoshio Kano, Masaki Yamaguchi
openalex +2 more sources

