Results 141 to 150 of about 21,543 (210)

A new approach to the fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket

, 2005
Ashburn, P., Gili, E., Hakim, M.M.A., Uchino, T., Hall, S., de Groot, C.H.   +5 more
core  

Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. [PDF]

Sensors (Basel)
Bianchini C, Vogni M, Chini A, Franceschini G.   +3 more
europepmc   +1 more source

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms. [PDF]

Micromachines (Basel)
Bernstein JB, Avraham T, Wang B.
europepmc   +1 more source

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset. [PDF]

Sci Rep
Chankla M, Chen BR, Singh SK, Chauhan YS, Lee WJ, Chen NY, Kanjanachuchai S, Wu TL.   +7 more
europepmc   +1 more source

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

CMOS-compatible vertical MOSFETs and logic gates with reduced parasitic capacitance.

, 2004
Uchino, T, Ashburn, P, de Groot, C H, Gili, E, Hall, S, Kunz, V D   +5 more
core  

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]

Nanomaterials (Basel)
Wang P, Li C, Deng C, Yang Q, Xu S, Tang X, Wang Z, Tao W, Tao N, Wang Q, Yu H.   +10 more
europepmc   +1 more source

A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]

Micromachines (Basel)
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc   +1 more source

Investigating 50nm channel length vertical MOSFETs containing a dielectric pocket in a circuit environment

, 2002
Ashburn, P., Donaghy, D.C., Hall, S., Kunz, VD, de Groot, C.H.   +4 more
core