Results 131 to 140 of about 28,940 (205)

Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics

, 2002
We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface.
Haque, A, Hakim, MMA
core   +1 more source

Discussion and prospects of active gate driver technology for SiC devices

机车电传动
Silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFETs) exhibit outstanding advantages in high-frequency, high-temperature, high-voltage, and high-current applications due to their superior performance.
HU Runchen, WANG Jiayi, LUO Xiang, LI Menghao, ZHANG Jianliang, HU Sideng   +5 more
doaj  

High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture

, 2003
Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically processed bulk Si MOSFETs.
Waite, A.M., Tang, Y.T., O’Neill, A.G., Chattopadhyay, S., Cullis, A.G., Paul, D.J., Norris, D.J., Olsen, S.H., Driscoll, L.S., Robbins, D.J., Kwa, K.S.K, Evans, A.G.R.   +11 more
core   +1 more source

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma. [PDF]

Micromachines (Basel)
Zhang P, Li DY, Xu JR, Chang QY, Hou B, Xi H, Ma XH.   +6 more
europepmc   +1 more source

Study of n-Channel 4H-SiC MOSFETs with a High-<i>k</i>/SiO₂ Stacked Gate Dielectric and a p⁺-Polysilicon Gate. [PDF]

Micromachines (Basel)
Lin Z, Cheng N, Cai W, Hu J, Hu S.
europepmc   +1 more source

High-Output-Current Boron-Doped Single-Crystal Diamond MOSFETs with a Thin Boron-Doped Epitaxial Layer. [PDF]

Nanomaterials (Basel)
Wang J, Wang R, Qu L, Chen G, Wen F, Wang H.   +5 more
europepmc   +1 more source

Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]

Materials (Basel)
Alshammari N, Rao MV, Li Q.
europepmc   +1 more source

Utilising power devices below 100 K to achieve ultra-low power losses [PDF]

One of the main trend in the development of high power electric machines (motors, generators) is to replace the magnetic components with superconducting wires, this inevitably leads to a critical requirement from the industry (Converteam) to operate ...
Leong, Kennith Kin
core  

Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases. [PDF]

Micromachines (Basel)
Yan M, Wang Z, Chen D, Li Y, Zhong Y, Li Y, Luo J, Xia H.   +7 more
europepmc   +1 more source

A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect. [PDF]

Nanomaterials (Basel)
Cheng H, Yang Z, Zhang C, Zhang Z.
europepmc   +1 more source