Results 131 to 140 of about 93,151 (296)

Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter

Kongzhi Yu Xinxi Jishu, 2017
In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working ...
DENG Xiaoxiang, LI Peng, DAI Chaofan, YANG Ronghao   +3 more
doaj  

Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip

Applied Physics Express
400 metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a half-inch diamond substrate. The performance of each device was evaluated, and an H-terminated diamond MOSFET chip was created by connecting over 300 of the well ...
Keita Takaesu, Daisuke Sano, Iku Ota, Keiko Otsuka, Daisuke Takeuchi, Toshiharu Makino, Hitoshi Umezawa   +6 more
doaj   +1 more source

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IEEE Journal of the Electron Devices Society
The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki   +5 more
doaj   +1 more source

Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets

Applied Physics Express
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober to ...
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori   +9 more
doaj   +1 more source

III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications

, 2020
Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg, Erik Lind   +4 more
openalex   +1 more source

Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL [PDF]

, 2017
Sufen Wei, Guohe Zhang, Zhibiao Shao, Li Geng, Cheng‐Fu Yang   +4 more
openalex   +1 more source

TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET [PDF]

Jieun Lee, Jong Min Kim, Seung Hyun Kim, Hee Bae Lee, Young Chul Kim, Hyun Chul Nah   +5 more
openalex   +1 more source

Discussion and prospects of active gate driver technology for SiC devices

机车电传动
Silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFETs) exhibit outstanding advantages in high-frequency, high-temperature, high-voltage, and high-current applications due to their superior performance.
HU Runchen, WANG Jiayi, LUO Xiang, LI Menghao, ZHANG Jianliang, HU Sideng   +5 more
doaj  

TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage [PDF]

Shuo Hou, Christoffer Lundgren, Wlodek Kaplan, Sergey A. Reshanov   +3 more
openalex   +1 more source

Replacing Silicon Power MOSFETs [PDF]

Alex Lidow, Michael de Rooij, John Glaser, Alejandro Pozo, Shengke Zhang, Marco Palma, David Reusch, Johan Strydom   +7 more
openalex   +1 more source