Results 101 to 110 of about 21,543 (210)

Optimized Rectifier Topologies for Low-Voltage Electromagnetic Energy Harvesters. [PDF]

Sensors (Basel)
Krug N, Heer F, Fischerauer G.
europepmc   +1 more source

A surface-potential-based compact model for partially-depleted silicon-on-insulator MOSFETs

, 2009
With the continuous scaling of CMOS technologies, Silicon-on-Insulator (SOI) technologies have become more competitive compared to bulk, due to their lower parasitic capacitances and leakage currents. The shift towards high frequency, low power circuitry,
Benson, James
core  

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]

Sci Rep
Hsiao YS, Chang PJ, Chen BR, Rai R, Singh SK, Chauhan YS, Lee WJ, Chen NY, Wu TL.   +8 more
europepmc   +1 more source

Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. [PDF]

Sci Rep
Cheng HC, Jhu WY, Liu YC, Yu CF, Chiu PK, Chang TC.   +5 more
europepmc   +1 more source

Simulation Study of Enhancement-Mode <i>β</i>-Ga₂O₃ MOSFETs on a Novel P-Ga₂O₃/AlN/SiC Substrate. [PDF]

Micromachines (Basel)
Lu W, Zhou C, Wang D, Liu Y, Wang P, Wang G.   +5 more
europepmc   +1 more source

An Analytical Model for the Non-Quasi-Static Small-Signal Behaviour of Submicron MOSFETs

, 1995
A new, analytical Non-Quasi-Static model, in terms of admittance parameters, for the small-signal behaviour of short channel MOSFETs is presented. The relevant short channel effects are included explicitly in the derivation of the model.
Behaviour Of Submicron Mosfets, F. M. Klaassen, T. Smedes   +2 more
core  

Scalable Ising machine composed entirely of Si transistors. [PDF]

Sci Adv
Yun SY, Kim JP, Jeong J, Lee SW, Chung YS, Kim S, Choi YK.   +6 more
europepmc   +1 more source

Defect-Mediated Threshold Voltage Tuning in β-Ga₂O₃ MOSFETs via Fluorine Plasma Treatment. [PDF]

Nanomaterials (Basel)
Wang L, Zhang Y, Dong J, Wang J, Wang Z, Feng Y, Wang X, Shen S, Zhu H.   +8 more
europepmc   +1 more source

A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability. [PDF]

Materials (Basel)
Feng Z, Lai P, Hasan ASMK, Fatani F, Alaeddini A, Huang L, Chen Z, Li Q.   +7 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source