Results 101 to 110 of about 3,660 (162)

Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]

Adv Mater
Cheong S, Lee SH, Han J, Park JY, Shin DH, Jang YH, Shim SK, Kim S, Hwang CS, Han JK.   +9 more
europepmc   +1 more source

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]

Sci Rep
Hsiao YS, Chang PJ, Chen BR, Rai R, Singh SK, Chauhan YS, Lee WJ, Chen NY, Wu TL.   +8 more
europepmc   +1 more source

Optimized Rectifier Topologies for Low-Voltage Electromagnetic Energy Harvesters. [PDF]

Sensors (Basel)
Krug N, Heer F, Fischerauer G.
europepmc   +1 more source

Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. [PDF]

Sci Rep
Cheng HC, Jhu WY, Liu YC, Yu CF, Chiu PK, Chang TC.   +5 more
europepmc   +1 more source

Simulation Study of Enhancement-Mode <i>β</i>-Ga₂O₃ MOSFETs on a Novel P-Ga₂O₃/AlN/SiC Substrate. [PDF]

Micromachines (Basel)
Lu W, Zhou C, Wang D, Liu Y, Wang P, Wang G.   +5 more
europepmc   +1 more source

Defect-Mediated Threshold Voltage Tuning in β-Ga₂O₃ MOSFETs via Fluorine Plasma Treatment. [PDF]

Nanomaterials (Basel)
Wang L, Zhang Y, Dong J, Wang J, Wang Z, Feng Y, Wang X, Shen S, Zhu H.   +8 more
europepmc   +1 more source

Scalable Ising machine composed entirely of Si transistors. [PDF]

Sci Adv
Yun SY, Kim JP, Jeong J, Lee SW, Chung YS, Kim S, Choi YK.   +6 more
europepmc   +1 more source

A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability. [PDF]

Materials (Basel)
Feng Z, Lai P, Hasan ASMK, Fatani F, Alaeddini A, Huang L, Chen Z, Li Q.   +7 more
europepmc   +1 more source

Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]

Micromachines (Basel)
Dhyani M, Singh S, Tzhayek N, Bernstein JB.   +3 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source