Results 81 to 90 of about 3,660 (162)

Comparison of Dielectric Recovery After Arc Burning in SF6 Gas and Its Potential Alternatives

High Voltage, EarlyView.
ABSTRACT Although sulphur hexafluoride (SF6) exhibits exceptional insulating properties, it is a potent greenhouse gas. Therefore, studying alternatives to SF6 is critical for developing environmentally friendly high‐voltage electrical equipment.
Ziqi Liu, Hao Sun, Yi Wu, Mingzhe Rong, Zeyuan Luo   +4 more
wiley   +1 more source

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Advanced Science
Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon.
Meiyong Liao, Huanying Sun, Satoshi Koizumi   +2 more
doaj   +1 more source

Diseño de un circuito de mitigación para mejorar la conmutación de MOSFETs en una configuración de medio puente H

Tecnología en Marcha
Este trabajo aborda el diseño de un circuito para minimizar los efectos adversos en la conmutación de MOSFETs en un medio puente H. Los MOSFETs enfrentan problemas de eficiencia y estabilidad debido a capacitancias e inductancias parásitas.
Giancarlo Alvarado-Rivera, Ana Rebeca Fonseca-Huapaya, Yeiner Arias-Esquivel   +2 more
doaj   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, Volume 28, Issue 15, 5 August 2026.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source

Development of a Polydimethylsiloxane‐Based Flexible Digital Bolus Dosimeter: From Unit‐Cell Characterization to Linear Array for Skin‐Dose Distribution Verification

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
A flexible digital bolus dosimeter platform is proposed to address the challenges of surface‐dose monitoring. The study evaluates point‐dose performance using an IDE substrate and extends this to spatial dose distributions using an fPCB‐integrated 24‐pixel array.
Moo‐Jae Han, Yohan Shin, Sang‐Won Kang, Sung‐Kwang Park, Woong Cho, Boram Lee, Jae‐Sung Kim, Jin‐Beom Chung   +7 more
wiley   +1 more source

A Module‐Level Photovoltaic Optimizer for Online I–V Curve Tracing and Daylight Photoluminescence

Advanced Sustainable Systems, Volume 10, Issue 8, August 2026.
This article presents a module‐level photovoltaic optimizer based on a synchronous buck converter. The system enables non‐invasive online I–V curve tracing and daylight photoluminescence imaging. By integrating advanced diagnostic capabilities with minimal hardware modifications, this compact solution offers cost‐effective, continuous inspection ...
Alberto Redondo‐Plaza, Amy Zulema Velasco‐Bonilla, José Ignacio Morales‐Aragones, Leonardo Cardinale‐Villalobos, Víctor Alonso‐Gómez, Luis Hernández‐Callejo   +5 more
wiley   +1 more source

Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter

Kongzhi Yu Xinxi Jishu, 2017
In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working ...
DENG Xiaoxiang, LI Peng, DAI Chaofan, YANG Ronghao   +3 more
doaj  

Charge Transport in All‐Inorganic CuInSe2 Nanocrystal Transistors: Linking Material Design and Device Performance

Advanced Electronic Materials, Volume 12, Issue 15, 10 August 2026.
This work explores how colloidal CuInSe2 nanocrystals form functional field‐effect transistors when their native ligands are replaced with short inorganic species that promote charge transport. By systematically adjusting nanocrystal dimensions, surface treatments, film characteristics, and device architecture, the study maps the resulting electronic ...
Nadia Günther, Borja Rodriguez‐Barea, Jasmin L. Herzog, Bjarne E. Stern, Alexandre Ansieau, Angelika Wrzesinska‐Lashkova, Yana Vaynzof, Artur Erbe, Alexander Eychmüller   +8 more
wiley   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source