Results 81 to 90 of about 21,543 (210)
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
A study of electrical and material characteristics of high-k / III-V MOSFETs and SiO2 RRAMs [PDF]
, 2013 textAggressive downscaling of complementary metal-oxide-semiconductor (CMOS) transistors has pushed Si-based transistors to their limit. III-V materials have much higher electron mobility compared to Si, which can potentially provide better device ...
Chen, Yen-Ting
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Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This work establishes a framework for high‐resolution printed interconnects by coupling e‐jet printing control, multilayer deposition, and sintering optimization. Ink properties and printing speed influence particle stacking, while different sintering atmospheres drive distinct microstructural evolution.
Kaifan Yue +6 more
wiley +1 more source
Advanced Science, Volume 13, Issue 31, 4 June 2026.This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun +10 more
wiley +1 more source
Coaxial Dipole Array With Switching Transmit Sensitivities for Ultrahigh Field MRI
Magnetic Resonance in Medicine, Volume 95, Issue 6, Page 3608-3615, June 2026.ABSTRACT Purpose To investigate dipole antennas with electronically switchable transmit field patterns to improve flip angle homogeneity in ultra‐high field MRI. Methods Reconfigurable dipole elements that could produce two distinct electronically switchable B1+ field profiles were conceptualized and constructed.
Dario Bosch +5 more
wiley +1 more source
Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics
, 2002 We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface.
Haque, A, Hakim, MMA
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Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
, 2004 Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core +1 more source
High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture
, 2003 Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically processed bulk Si MOSFETs.
Waite, A.M. +11 more
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