Results 81 to 90 of about 93,151 (296)

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices

Results in Physics
Two-dimensional (2D) materials have recently emerged as a pivotal force in the advancement of semiconductor technology, particularly as Moore’s law approaches its physical limits.
Jia-Yi Li, Xia-Fei Lei, Yong Zhang, Shi-Zhang Chen, Jing Feng, Xi Wu, Bo Chen, Feng Ning   +7 more
doaj   +1 more source

A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions

, 1999
We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also interact ...
Abrahams, Altshuler, Ando, Belitz, Castellani, Chui, Dobrosavljević, Goss Levy, Hanein, He, Heemskerk, Kravchenko, Kravchenko, Kravchenko, Kruithof, Marmorkos, Phillips, Popović, Pudalov, S. Das Sarma, Si, Simmons, Simonian, Sondhi, T.M. Klapwijk, Vinter, Vyrodov   +26 more
core   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

, 2010
A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, {\lambda}eff, is extracted from the analytical model, which cannot be approximated ...
Koester, Steven J., Koswatta, Siyuranga O., Lu, Yeqing, Xing, Huili Grace, Zhang, Qin   +4 more
core   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Thermal Analysis and Switching Performance of a 1.7 kV SiC Power MOSFET Under High-Frequency Operation and Double Pulse Testing

IEEE Access
This study presents a comprehensive simulation analysis of 1.7 kV SiC Power MOSFETs (SiC) compared to conventional Si power MOSFETs (Si1 and Si2) focusing on thermal behavior, switching performance, and efficiency under various operating conditions ...
Muhammad Najmi Seth, Nurul Amirah Zulkifle, Nur Syamimi Noorasid, Ghazali Omar, Ahmad Nizamuddin, Faiz Arith   +5 more
doaj   +1 more source

Effect of gamma ray absorbed dose on the FET transistor parameters

Results in Physics, 2016
This article tries to explain a modified method on dosimetry, based on electronic solid state including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose, behavior of two models of MOSFETs has been studied as a function of the
Baharak Eslami, Saleh Ashrafi
doaj   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
For self‐aligned top‐gate amorphous InGaZnO thin‐film transistors (TFTs), a capacitance‐voltage‐based extraction technique that directly reconstructs a lateral doping profile and key parameters is proposed. The extracted profiles are validated by direct comparison with the transfer‐length method.
Seung Joo Myoung, Chang Il Ryoo, Jingyu Park, Dong Hyeop Shin, Su Han Noh, Sae Him Jung, Soohong Eo, Wonjung Kim, Sung Jun Yun, Jae Moon Soh, Yoo Seok Park, Changwook Kim, Dong Myong Kim, Sung‐Jin Choi, Yoon Jung Lee, Ickhyun Song, Dae Hwan Kim   +16 more
wiley   +1 more source