Results 61 to 70 of about 28,940 (205)

Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs [PDF]

, 2002
We investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results
Haque, A, Hakim, MMA
core   +1 more source

A Preclinical Multifunctional Capsule Robot with Unified Diagnosis and Targeted Thermal Therapy for Gastrointestinal Diseases

Advanced Science, EarlyView.
A proof‐of‐concept multifunctional capsule robot integrates diagnostic imaging, magnetic navigation, wireless power transfer, and targeted thermotherapy for gastrointestinal applications. Magnetically guided positioning and stable wireless power enable localized thermal ablation, achieving controlled heating and high cell mortality in vitro.
Heng Zhang, Yichong Sun, Xiaoting Zhang, Chi‐Kwan Lee, Zheng Li, Yehui Li, Huarong Chen, Paul D. Mitcheson   +7 more
wiley   +1 more source

Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs

Nanoscale Research Letters, 2021
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia, Haodong Hu, Genquan Han, Yan Liu, Yue Hao   +4 more
doaj   +1 more source

Probabilistic Computing via Gate‐Tunable Random Telegraph Noise

Advanced Science, EarlyView.
Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun, Jin Pyo Kang, Ho‐Sung Lee, Ik‐Hyeon Jeon, Ki‐Ju Park, Won‐Ju Cho, Seung‐heon Chris Baek, Joo‐Hyung Chae, Hamin Park   +8 more
wiley   +1 more source

Breakdown of universal mobility curves in sub-100-nm MOSFETs [PDF]

, 2001
We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach.
Roy, S, Asenov, A., Kaya, S., S. Kaya, A. Asenov, Roy, S., S. Roy, Kaya, S, Asenov, A   +8 more
core   +2 more sources

Review of Voltage Balancing Techniques for Series-Connected SiC Metal–Oxide–Semiconductor Field-Effect Transistors

Energies
Power devices in series are low-voltage power devices used in medium- and high-voltage applications in a more direct program. However, when power devices in series are used, because of their electrical performance parameters or external circuit ...
Lucheng Sun, Mingzhong Qiao, Yihui Xia, Bo Wu, Fulin Chen   +4 more
doaj   +1 more source

Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence

Advanced Science, EarlyView.
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang, Fanyi Meng, Fanying Meng, Shida Huo, Junxi Xu, Yaohui Wang, Yuexuan Ma, Yuan Xie, Xiaodong Hu, Caofeng Pan, Enxiu Wu   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

, 2010
We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully
Tan, L., Redman-White, W., Ashburn, P., S. Connor, Hall, S., M. M. A. Hakim, Abuelgasim, A., L. Tan, K. Mallik, W. Redman-White, de Groot, C.H., C. H. de Groot, A. Bousquet, Hakim, M.M.A., A. Abuelgasim, S. Hall, P. Ashburn   +16 more
core   +1 more source

Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm [PDF]

, 2007
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date.
Moran, D.A.J., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Abrokwah, J., Zurcher, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source