Results 31 to 40 of about 93,151 (296)

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate.
Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source

Electrically Active Defects in SiC Power MOSFETs

Energies, 2023
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric.
Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev   +3 more
doaj   +1 more source

High performance III-V MOSFETs: a dream close to reality? [PDF]

, 2002
We have studied the performance potential of sub 100 nm compound MOSFETs with InGaAs channel and high-k gate insulator, using ensemble Monte Carlo simulations.
Asenov, A., Kalna, K., Yang, L.
core  

Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs [PDF]

, 2000
Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm.
Asenov, A., Barker, J.R., Watling, J.R., Zhao, Y.P.   +3 more
core   +2 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology [PDF]

Informacije MIDEM, 2021
I. Mamatov, Y. Özçelep, F. Kaçar
doaj   +1 more source

Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors
Kang Hong, Xiao-Yuan Chen, Yu Chen, Ming-Shun Zhang, Jia-Lei Wang, Shan Jiang, Zhou Pang, Han-Mei Yang, Ning Xue, Hua-Yu Gou, Lei Zeng   +10 more
doaj   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Boron-doped diamond MOSFETs operating at temperatures up to 400°C

Functional Diamond
The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C.
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

IEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source