Results 31 to 40 of about 28,940 (205)

Electrically Active Defects in SiC Power MOSFETs

Energies, 2023
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric.
Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev   +3 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs [PDF]

, 2011
Trench depth is important in low-voltage trench MOSFETs because it affects the switching losses through the gate-drain capacitance (C(GD)).
Ian Kennedy, Jennings, M. R., Mawby, P. A. (Philip A.), Petkos, George, Nii-Adotei Parker-Allotey, Michael Jennings, Phil Mawby, Kennedy, Ian, Olayiwola Alatise, George Petkos, Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei   +11 more
core   +1 more source

Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs

IEEE Journal of the Electron Devices Society, 2019
Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors
Kang Hong, Xiao-Yuan Chen, Yu Chen, Ming-Shun Zhang, Jia-Lei Wang, Shan Jiang, Zhou Pang, Han-Mei Yang, Ning Xue, Hua-Yu Gou, Lei Zeng   +10 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Boron-doped diamond MOSFETs operating at temperatures up to 400°C

Functional Diamond
The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C.
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide   +3 more
doaj   +1 more source

High-temperature instability processes in SOI structures and MOSFETs

Journal of Telecommunications and Information Technology, 2001
The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ...
Alexei N. Nazarov, V. I. Kilchytska, Ja. N. Vovk, J. P. Colinge   +3 more
doaj   +1 more source

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

IEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter [PDF]

, 2009
The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage gain of a push-pull inverting amplifier is assessed by technology-computer-aided-design (TCAD)
O'Neill, Anthony G., Kwa, Kelvin S. K., Olsen, Sarah H., Alatise, Olayiwola M.   +3 more
core   +1 more source