Results 31 to 40 of about 21,543 (210)

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Breakdown of universal mobility curves in sub-100-nm MOSFETs [PDF]

, 2001
We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach.
Roy, S, Asenov, A., Kaya, S., S. Kaya, A. Asenov, Roy, S., S. Roy, Kaya, S, Asenov, A   +8 more
core   +1 more source

Smart Closed‐Loop Systems in Personalized Healthcare: Advances and Outlook

Advanced Materials Technologies, EarlyView.
A smart closed‐loop e‐textile integrates multimodal sensing, onboard processing, wireless communication, and wearable power to enable real‐time physiological/biochemical monitoring and feedback‐controlled therapy. ABSTRACT Smart textiles represent a revolutionary frontier in healthcare, seamlessly blending fabric and advanced technologies to create ...
Safoora Khosravi, Sang Won Lee, Mohammad Abrar Uddin, Sina Hassanpoor, Neha Suvindran, Katherine Le, Harun Arkaz, Harishkumar Narayana, Saeid Soltanian, Danial Khorsandi, Negar Hosseinzadeh Kouchehbaghi, Taeil Kim, Yangzhi Zhu   +12 more
wiley   +1 more source

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]

, 2008
The first demonstration of implant-free, flatband-mode In_0.75Ga_0.25As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J., Ignatova, O., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Fejes, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source

Modular, Textile‐Based Soft Robotic Grippers for Agricultural Produce Handling

Advanced Robotics Research, EarlyView.
This article introduces textile‐based pneumatic grippers that transform simple textiles into robust bending actuators. Detailed experiments uncover how cut geometry and fabric selection shape performance. Successful handling of fragile agricultural items showcases the potential of textile robotics for safe, scalable automation in food processing and ...
Zeyu Hou, Eran Beeri Bamani, Joao Buzzatto, Bryan Busby, Lucas Ferrari Gerez   +4 more
wiley   +1 more source

Self‐Assisted Charge Storage‐Release Mechanism Enabling Flexible Design of Biomimetic Triboelectric Nanogenerators

Advanced Science, EarlyView.
Inspired by the mimosa, this study develops a flexible triboelectric nanogenerator with a novel microneedle array and battery‐mimetic architecture. The device introduces a spontaneous charge self‐regulation mechanism that confines the electric field below the air breakdown threshold, and achieves an outstanding charge density of 396.50 µC m−2 ...
Hanpeng Gao, Yamin Hu, Li Li, Ana Sofia Oliveira Henriques Moita, Xi Wang, Zong Meng, Zhiwu Han, Yan Liu   +7 more
wiley   +1 more source

Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS

Advanced Science, EarlyView.
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun, Miji Kim, Wooyeon Shin, Yongjun Park, Kanghwan Kim, Il‐Joo Cho, Jae Won Shim, Min Soo Kim, Sunwoo Lee, Jeongjin Kim, Changhyuk Lee   +10 more
wiley   +1 more source

Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm [PDF]

, 2007
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date.
Moran, D.A.J., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Abrokwah, J., Zurcher, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]

, 2005
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Samsudin, K., Cheng, B., Brown, A.R., Asenov, A., Roy, S.   +4 more
core   +1 more source