Results 11 to 20 of about 93,151 (296)

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs [PDF]

, 2010
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated.
Alatise, Olayiwola M., Kwa, Kelvin S. K., O'Neill, Anthony G., Olsen, Sarah H.   +3 more
core   +1 more source

Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility

IEEE Journal of the Electron Devices Society, 2016
Deformation potential (Dac), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, back ...
Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida   +4 more
doaj   +1 more source

Probabilistic computing with future deep sub-micrometer devices: a modelling approach [PDF]

, 2005
An approach is described that investigates the potential of probabilistic "neural" architectures for computation with deep sub-micrometer (DSM) MOSFETs.
Cheng, B., Hamid, N. H., Laurenson, D., Murray, A.F., Roy, S.   +4 more
core   +1 more source

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

IEEE Journal of the Electron Devices Society, 2016
We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal ...
Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida   +4 more
doaj   +1 more source

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

IEEE Access, 2023
SiC MOSFETs are suited for several power electronic converters as they reduce loss, increase efficiency, withstand high temperatures and switch faster. SiC MOSFETs are 2-quadrant switches as they can block voltage of only one polarity.
Nishant Anurag, Shabari Nath
doaj   +1 more source

Efficient 3D `atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs [PDF]

, 1998
A 3D `atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 μm MOSFETs is presented.
Asenov, A.
core   +1 more source

Breakdown of universal mobility curves in sub-100-nm MOSFETs [PDF]

, 2001
We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach.
Asenov, A., Kaya, S., Roy, S.
core   +1 more source

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study [PDF]

, 2000
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs.
Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., Saini, S.   +4 more
core   +1 more source

Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar

Energies, 2023
Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency.
Ismail Ataseven, Ilker Sahin, Salih Baris Ozturk   +2 more
doaj   +1 more source

180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]

, 2007
: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Droopad, R., Hill, R.J.W., Li, X., Macintyre, D., Moran, D.A.J., Passlack, M., Thayne, I.G., Thoms, S., Zhou, H.   +8 more
core   +1 more source