Results 11 to 20 of about 3,660 (162)

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

IEEE Journal of the Electron Devices Society, 2016
We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal ...
Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida   +4 more
doaj   +1 more source

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

IEEE Access, 2023
SiC MOSFETs are suited for several power electronic converters as they reduce loss, increase efficiency, withstand high temperatures and switch faster. SiC MOSFETs are 2-quadrant switches as they can block voltage of only one polarity.
Nishant Anurag, Shabari Nath
doaj   +1 more source

A comparative study of hole and electron inversion layer quantization in MOS structures [PDF]

Serbian Journal of Electrical Engineering, 2010
In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied
Chaudhry Amit, Roy Nath Jatinder
doaj   +1 more source

Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar

Energies, 2023
Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency.
Ismail Ataseven, Ilker Sahin, Salih Baris Ozturk   +2 more
doaj   +1 more source

Challenges and Prospects of Nanoscale MOSFET Scaling: A Review

Anbar Journal of Engineering Sciences
This review surveys scaling limitations and solution strategies for nanoscale MOSFETs, including high-k dielectrics, metal gates, FinFETs, GAA devices, and beyond-CMOS technologies.
Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Najim   +2 more
doaj   +1 more source

Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs

Sensors, 2012
A biocompatible and functional interface can improve the sensitivity of bioelectronics. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the surface
Shu-Ping Lin, Tien-Yin Chi, Tung-Yen Lai, Mao-Chen Liu   +3 more
doaj   +1 more source

Influence and reinforcement of gate bias on total dose effect of SiC MOSFET

机车电传动, 2023
To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold ...
QIU Leshan, WU Zhikang, CHEN Yan, LI Chengzhan, BAI Yun   +4 more
doaj  

Effect of Source/Drain Lateral Straggle on Distortion and Intrinsic Performance of Asymmetric Underlap DG-MOSFETs

IEEE Journal of the Electron Devices Society, 2014
This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices.
Kalyan Koley, Arka Dutta, Samar K. Saha, Chandan K. Sarkar   +3 more
doaj   +1 more source

A Negative-Feedback Gate-Loop for Current Balancing Paralleled SiC MOSFETs Based on a Differential Mode Inductor

IEEE Access
Using paralleled SiC MOSFETs is an economical and commonly-used solution for high-power applications. However, the dynamic unbalanced currents during TURN-ON and TURN-OFF processes can pose the security and stability threats in the parallel connection of
Zheng Cao, Ruihong Zhang, Shaocong Wang, E. Peng   +3 more
doaj   +1 more source

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

IET Power Electronics, 2022
Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly‐Si gate, resulting ...
Hengyu Yu, Jun Wang, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu, Bing Ji, Z. John Shen   +6 more
doaj   +1 more source