Results 21 to 30 of about 50,747 (239)
Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019 This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented.
P. Trochimiuk +2 more
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Design and Comparison of SiC MOSFET inverter for Underwater High-Power and High-Speed Motor
水下无人系统学报, 2023 The proposal of deep and high sea and the application target of high maneuverability and concealment means that the future power system of underwater vehicles should have higher speed, power density, and efficiency.
Li ZHAI +5 more
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The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M. +7 more
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Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs
IEEE Access, 2020 Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli +5 more
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Assessment of ecosystem integrity of lowland dipterocarp forest ecosystem using remote sensing [PDF]
, 2021 Ecosystem Integrity Index (EII) is a concept to determine the quality or the health of an ecosystem. The EII development can assist forest managers and decision makers in the conservation effort and forest management in Malaysia through the development ...
Abdul Razak, Muhammad Azmil
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IEEE Access, 2019 Aging has been generally regarded as one of the principal root causes of power device failure, due to it makes the performance of power device degradative, which will directly influence the electrical–thermal performances of the power device. Thus,
Shengyou Xu +5 more
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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Systematic Comparison of HF CMOS Transconductors [PDF]
, 2003 Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties.
Klumperink, Eric A.M., Nauta, Bram
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Prognostics of power MOSFET [PDF]
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011 This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs.
Jose R. Celaya +4 more
openaire +1 more source
COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs
Platform, a Journal of Engineering, 2021 The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad.
Shree Chakravarthy Devadas +1 more
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