Results 21 to 30 of about 4,174 (199)
Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2021 The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component.
Sebastian Bąba
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Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters
Frontiers in Physics, 2022 With the emerging wide bandgap (WBG) semiconductor development, the increasing power density and efficiency of power electronic converters may cause more switching oscillation, electromagnetic interference noise, and additional power loss, further ...
Minghui Yun +7 more
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High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
IEEE Journal of the Electron Devices Society, 2021 SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties.
Yue Chen +3 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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IEEE Access, 2023 This paper combines real-time temperature detection of MOSFETs inside solid-state switches with a temperature field model, and proposes a current limiting protection control strategy based on real-time heat management of MOSFETs.
Yufang Lu +4 more
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The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) [PDF]
E3S Web of Conferences, 2020 Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity.
Yuanlong Chen
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Sensors, 2023 In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury +7 more
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Prognostics of power MOSFET [PDF]
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011 This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs.
Celaya, Jose R. +4 more
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Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating
Micromachines, 2022 When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. In this
Zhenmin Liu +5 more
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Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency [PDF]
Archives of Electrical Engineering, 2022 With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector.
Sivaraj Panneerselvam +2 more
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