Results 21 to 30 of about 4,760,033 (232)

Prognostics of power MOSFET [PDF]

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011
This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs.
Celaya, Jose R., Saxena, Abhinav, Saha, Sankalita, Vashchenko, Vladislav, Goebel, Kai   +4 more
openaire   +1 more source

A Preclinical Multifunctional Capsule Robot with Unified Diagnosis and Targeted Thermal Therapy for Gastrointestinal Diseases. [PDF]

Adv Sci (Weinh)
A proof‐of‐concept multifunctional capsule robot integrates diagnostic imaging, magnetic navigation, wireless power transfer, and targeted thermotherapy for gastrointestinal applications. Magnetically guided positioning and stable wireless power enable localized thermal ablation, achieving controlled heating and high cell mortality in vitro.
Zhang H, Sun Y, Zhang X, Lee CK, Li Z, Li Y, Chen H, Mitcheson PD.   +7 more
europepmc   +2 more sources

Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating

Micromachines, 2022
When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. In this
Zhenmin Liu, Na Chen, Yong Liu, Zhenyi Chen, Fufei Pang, Tingyun Wang   +5 more
doaj   +1 more source

Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE

, 2021
The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits.
Faisal Mohd-Yasin, Dimitrijev, Sima, Pande, Peyush, Jadli, Utkarsh, Hamid Amini Moghadam, Sima Dimitrijev, Utkarsh Jadli, Chaturvedi, Mayank, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Mayank Chaturvedi, Peyush Pande, https://orcid.org/   +12 more
core   +1 more source

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance [PDF]

, 2004
The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Uchino, T, Wang, Y, Hemment, P L F, Donaghy, D C, Ashburn, P, Gili, E, de Groot, C H, Hall, S, Kunz, V D   +8 more
core   +2 more sources

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

IEEE Access, 2020
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev   +5 more
doaj   +1 more source

Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

IEEE Journal of the Electron Devices Society, 2021
A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat ...
Taichi Ogawa, Wataru Saito, Shin-Ichi Nishizawa   +2 more
doaj   +1 more source

Analysis and Modeling for the Real-Time Condition Evaluating of MOSFET Power Device Using Adaptive Neuro-Fuzzy Inference System

IEEE Access, 2019
Aging has been generally regarded as one of the principal root causes of power device failure, due to it makes the performance of power device degradative, which will directly influence the electrical–thermal performances of the power device. Thus,
Shengyou Xu, Xin Yang, Minyou Chen, Wei Lai, Yueyue Wang, Li Ran   +5 more
doaj   +1 more source

Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices [PDF]

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019
This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented.
P. Trochimiuk, M. Zdanowski, J. Rabkowski   +2 more
doaj   +1 more source

Design and Comparison of SiC MOSFET inverter for Underwater High-Power and High-Speed Motor

水下无人系统学报, 2023
The proposal of deep and high sea and the application target of high maneuverability and concealment means that the future power system of underwater vehicles should have higher speed, power density, and efficiency.
Li ZHAI, Yang WANG, Limin HU, Guohai LIU, Yabing LIU, Enlin MA   +5 more
doaj   +1 more source