IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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IEEE Access, 2023 This paper combines real-time temperature detection of MOSFETs inside solid-state switches with a temperature field model, and proposes a current limiting protection control strategy based on real-time heat management of MOSFETs.
Yufang Lu +4 more
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The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) [PDF]
E3S Web of Conferences, 2020 Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity.
Yuanlong Chen
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Sensors, 2023 In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury +7 more
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Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating
Micromachines, 2022 When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. In this
Zhenmin Liu +5 more
doaj +1 more source
Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency [PDF]
Archives of Electrical Engineering, 2022 With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector.
Sivaraj Panneerselvam +2 more
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The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs [PDF]
, 2010 The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated.
Alatise, Olayiwola M. +3 more
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Novel Selection Criteria of Primary Side Transistors for LLC Resonant Converters [PDF]
, 2018 This work has been supported by the Spanish Government under Project MINECO-17-DPI2016-75760-R, Project DPI2014-56358-JIN and grant FPI BES-2014-070785, and by the Principality of Asturias under Project SV-PA-17-RIS3-4 and FEDER ...
Bauwens, Filip +5 more
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Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits
IEEE Journal of the Electron Devices Society, 2021 A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat ...
Taichi Ogawa +2 more
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Probabilistic computing with future deep sub-micrometer devices: a modelling approach [PDF]
, 2005 An approach is described that investigates the potential of probabilistic "neural" architectures for computation with deep sub-micrometer (DSM) MOSFETs.
Cheng, B. +4 more
core +1 more source