Results 11 to 20 of about 4,174 (199)
Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation [PDF]
Sensors, 2017 A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi +3 more
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Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis [PDF]
MicromachinesThe performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study
M. Ejaz Aslam Lodhi +4 more
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High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET [PDF]
Scientific ReportsThis paper analyses the various properties that governs a power MOSFET for a novel and unique vertical triple gate selective buried trench power MOSFET. Our recent work consists of a MOSFET having two lateral selective buried gates and a single vertical ...
M. Ejaz Aslam Lodhi +4 more
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Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter [PDF]
Scientific ReportsThis study aims to investigate the influence of parasitic capacitances within half-bridge SiC power metal oxide semiconductor field effect transistor (MOSFET) modules, including input capacitance (Ciss), output capacitance (Coss), and reverse transfer ...
Hsien-Chie Cheng +5 more
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Study of 3C-SiC Power MOSFETs. [PDF]
Micromachines (Basel)This work presents the simulation and design of 3C-SiC power MOSFETs, focusing on critical parameters including avalanche impact ionization, breakdown voltage, bulk and channel mobilities, and the trade-off between on-resistance and breakdown voltage. The device design is carried out by evaluating the blocking voltage of scaled structures as a function
Fardi H.
europepmc +4 more sources
Undergraduate Journal of Mathematical Modeling: One + Two, 2010 A MOSFET is defined as metal oxide semiconductor field effect transistor. These electrical components are combined or integrated to form control and logic functions for laptop and desktop computers, power controls in printing devices, motor controls and ...
Frederick Selkey
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Vertical GaN MOSFET Power Devices
Micromachines, 2023 Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices.
Catherine Langpoklakpam +4 more
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Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2022 High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities.
Dawid Zięba, Jacek Rąbkowski
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IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
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Wasit Journal of Engineering Sciences, 2022 Bidirectional DC-DC converters allow power to be transferred in any direction between two electrical sources. These converters are increasingly employed in a variety of applications, including battery chargers and dischargers, energy storage devices ...
nuha al-obaidi +2 more
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