Results 11 to 20 of about 4,760,033 (232)

Power Consumption of a MOSFET [PDF]

open access: yesUndergraduate Journal of Mathematical Modeling: One + Two, 2010
A MOSFET is defined as metal oxide semiconductor field effect transistor. These electrical components are combined or integrated to form control and logic functions for laptop and desktop computers, power controls in printing devices, motor controls and ...
Frederick Selkey
doaj   +5 more sources

The Power MOSFET

open access: yes, 2007
This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
Issa Batarseh, Batarseh, Issa
core   +5 more sources

Vertical GaN MOSFET Power Devices

open access: yesMicromachines, 2023
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices.
Catherine Langpoklakpam   +4 more
doaj   +3 more sources

Feasibility of high frequency alternating current power distribution for the automobile auxiliary electrical system [PDF]

open access: yes, 2011
This study investigates the feasibility and potential benefits of high frequency alternating current (HFAC) for vehicle auxiliary electrical systems. A 100Vrms, 50kHz sinusoidal AC bus is compared with 14V DC and 42V DC electrical systems in terms of ...
Antaloae, C. C.
core   +7 more sources

Neuromorphic Devices and Computing for Sensing, Memory, and Control. [PDF]

open access: yesAdv Sci (Weinh)
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhu Z, Schaffer N, Yang X.
europepmc   +2 more sources

Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation

open access: yesIEEE Journal of the Electron Devices Society, 2022
SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim   +4 more
doaj   +1 more source

A Novel Current Limiting Protection Control Strategy by Power MOSFET Thermal Management for Solid-State Power Controller

open access: yesIEEE Access, 2023
This paper combines real-time temperature detection of MOSFETs inside solid-state switches with a temperature field model, and proposes a current limiting protection control strategy based on real-time heat management of MOSFETs.
Yufang Lu   +4 more
doaj   +1 more source

The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) [PDF]

open access: yesE3S Web of Conferences, 2020
Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity.
Yuanlong Chen
doaj   +1 more source

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

open access: yesSensors, 2023
In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury   +7 more
doaj   +1 more source

The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]

open access: yes, 2010
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Khan, Khalid Saeed   +15 more
core   +2 more sources

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