Results 31 to 40 of about 4,174 (199)

Design of Pulse Power Supply for High-Power Semiconductor Laser Diode Arrays

IEEE Access, 2019
This paper mainly introduces a design circuit and control method of pulse power supply for high-power semiconductor laser diode arrays. According to the high voltage and large current operating characteristics of semiconductor laser, the control strategy
Qinglin Zhao, Shu Li, Ruru Cao, Deyu Wang, Jing Yuan   +4 more
doaj   +1 more source

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

International Islamic University Malaysia Engineering Journal, 2020
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim, AHM Zahirul Alam, Naimah Binti Darmis   +2 more
doaj   +1 more source

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Micromachines, 2021
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen, Yun-Kai Lai, Kung-Yen Lee, Chih-Fang Huang, Shin-Yi Huang   +4 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

IEEE Journal of the Electron Devices Society, 2021
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li, Jingwei Guo, Zhi Lin, Shengdong Hu   +3 more
doaj   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance [PDF]

Radioengineering, 2019
This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model ...
P. Vacula, V. Kote, D. Barri, M. Vacula, M. Husak, J. Jakovenko, S. Privitera   +6 more
doaj  

Smart Closed‐Loop Systems in Personalized Healthcare: Advances and Outlook

Advanced Materials Technologies, EarlyView.
A smart closed‐loop e‐textile integrates multimodal sensing, onboard processing, wireless communication, and wearable power to enable real‐time physiological/biochemical monitoring and feedback‐controlled therapy. ABSTRACT Smart textiles represent a revolutionary frontier in healthcare, seamlessly blending fabric and advanced technologies to create ...
Safoora Khosravi, Sang Won Lee, Mohammad Abrar Uddin, Sina Hassanpoor, Neha Suvindran, Katherine Le, Harun Arkaz, Harishkumar Narayana, Saeid Soltanian, Danial Khorsandi, Negar Hosseinzadeh Kouchehbaghi, Taeil Kim, Yangzhi Zhu   +12 more
wiley   +1 more source

Effects of design parameter on power handling capability of RF SOI switch

Dianzi Jishu Yingyong
The effects of design parameter on power handling capability of radio-frequency silicon-on-insulator (RF SOI) switch were comprehensively investigated in this work, including the width of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under ...
Liu Zhangli
doaj   +1 more source