Results 31 to 40 of about 50,747 (239)
Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms
Mathematics, 2023 Predicting the long-term lifetime of power MOSFET devices plays a central role in the prevention of unprecedented failures for power MOSFETs used in safety-critical applications.
Mesfin Seid Ibrahim +6 more
doaj +1 more source
Analysis of power converters with devices of SiC for applications in electric traction systems [PDF]
, 2016 This article presents the analysis of two topologies of power converters. Voltage Source Inverter (VSI) and Current Source Inverter (CSI) proposals for traction system applications, these topologies are implemented with silicon carbide devices.
Fernández Palomeque, Efrén Esteban +3 more
core +1 more source
IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
doaj +1 more source
Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, 2021 A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng +4 more
doaj +1 more source
Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
, 2006 We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni +16 more
core +1 more source
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]
, 2019 The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M +6 more
core +1 more source
Design of Pulse Power Supply for High-Power Semiconductor Laser Diode Arrays
IEEE Access, 2019 This paper mainly introduces a design circuit and control method of pulse power supply for high-power semiconductor laser diode arrays. According to the high voltage and large current operating characteristics of semiconductor laser, the control strategy
Qinglin Zhao +4 more
doaj +1 more source
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
doaj +1 more source
Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing
, 2009 We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances.
Agarwal S. C. +20 more
core +1 more source
Power MOSFET temperature measurements [PDF]
1982 IEEE Power Electronics Specialists conference, 1982 Three temperature-sensitive electrical parameters are compared as thermometers for power MOSFET devices. The parameters are the forward drain-body diode voltage, the source-gate voltage, and the on-resistance. The results are also compared with temperatures measured with an infrared microradiometer.
David L. Blackburn, David W. Berning
openaire +1 more source