Results 31 to 40 of about 4,215 (202)

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Micromachines, 2021
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen, Yun-Kai Lai, Kung-Yen Lee, Chih-Fang Huang, Shin-Yi Huang   +4 more
doaj   +1 more source

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

IEEE Journal of the Electron Devices Society, 2021
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li, Jingwei Guo, Zhi Lin, Shengdong Hu   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

International Islamic University Malaysia Engineering Journal, 2020
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim, AHM Zahirul Alam, Naimah Binti Darmis   +2 more
doaj   +1 more source

Conjugated Metal‐Organic Frameworks on Laser‐Induced‐Graphene Scaffold Enable Picomolar Sensitivity in Electrical Biosensors

Advanced Materials Interfaces, EarlyView.
A controlled layer‐by‐layer growth process integrates conjugated metal‐organic framework thin films onto a hierarchical 3D laser‐induced graphene scaffold. When incorporated into an extended‐gate field‐effect transistor configuration, this synergistic hybrid platform achieves robust aptamer immobilization, driving highly selective, picomolar‐level ...
Khanh T. M. Le, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance [PDF]

Radioengineering, 2019
This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model ...
P. Vacula, V. Kote, D. Barri, M. Vacula, M. Husak, J. Jakovenko, S. Privitera   +6 more
doaj  

Modular, Textile‐Based Soft Robotic Grippers for Agricultural Produce Handling

Advanced Robotics Research, EarlyView.
This article introduces textile‐based pneumatic grippers that transform simple textiles into robust bending actuators. Detailed experiments uncover how cut geometry and fabric selection shape performance. Successful handling of fragile agricultural items showcases the potential of textile robotics for safe, scalable automation in food processing and ...
Zeyu Hou, Eran Beeri Bamani, Joao Buzzatto, Bryan Busby, Lucas Ferrari Gerez   +4 more
wiley   +1 more source

Effects of design parameter on power handling capability of RF SOI switch

Dianzi Jishu Yingyong
The effects of design parameter on power handling capability of radio-frequency silicon-on-insulator (RF SOI) switch were comprehensively investigated in this work, including the width of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under ...
Liu Zhangli
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source