Results 61 to 70 of about 4,760,033 (232)
Analysis and tests for the characterization of MOSFET devices
, 2023 reservedL'argomento di studio della tesi riguarda i dispositivi MOSFET, in particolare vengono analizzati i transitori di accensione e spegnimento di un MOSFET di potenza generico applicato ad un circuito con carico induttivo.
COZZA, ALEX
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IEEE Access, 2023 This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
doaj +1 more source
Modelo compacto de não-linearidades em transistores MOS: [dissertação] [PDF]
, 2006 Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho, é proposto um modelo compacto para não-linearidades em transistores MOS desenvolvido com base nas ...
Silva, Pablo Dutra da
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Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Advanced Science, EarlyView.Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence
Advanced Science, EarlyView.We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang +10 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Improved sub-threshold Slope in RF vertical MOSFETS using a frame gate architecture [PDF]
, 2008 We report a CMOS-compatible vertical MOSFET, which incorporates a frame gate architecture suitable for application in RF circuits. Fabricated surround gate vertical MOSFETs with the frame gate architecture show no degradation of short channel effects ...
Tan, L. +13 more
core +1 more source
Simulation of SiC MOSFET Power Converters [PDF]
, 2017 This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter).
Albadri, Mustafa Nameer
core +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source