Results 61 to 70 of about 50,747 (239)
IEEE Access, 2023 This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
doaj +1 more source
Advanced Science, EarlyView.Inspired by the mimosa, this study develops a flexible triboelectric nanogenerator with a novel microneedle array and battery‐mimetic architecture. The device introduces a spontaneous charge self‐regulation mechanism that confines the electric field below the air breakdown threshold, and achieves an outstanding charge density of 396.50 µC m−2 ...
Hanpeng Gao +7 more
wiley +1 more source
A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics
IET Power ElectronicsSplit‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj +1 more source
Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET
, 2011 Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area and speed of million-gate spin FPGA are numerically benchmarked with CMOS
Gao Y. +11 more
core +1 more source
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [PDF]
, 2003 Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems ...
Asenov, A. +4 more
core +2 more sources
Pellet Printing for Soft Robotic Devices
Advanced Science, EarlyView.Fused Granulate Fabrication (FGF) is established here as a reliable method for fabricating soft, airtight robotic devices. Through coordinated optimization of hardware, material selection, and process parameters, this approach enables high‐speed printing of thermoplastic elastomers with silicone‐like softness and modulus.
Yijia Wu +6 more
wiley +1 more source
Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Crystals, 2023 Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices.
Maolin Zhang +5 more
doaj +1 more source
Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
Advanced Science, EarlyView.A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source
A magnetically isolated gate driver for high-speed voltage sharing in series-connected MOSFETs [PDF]
, 2011 A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads.
Anthony, Philip +4 more
core
Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
core +3 more sources