Results 61 to 70 of about 4,174 (199)
Numerical modeling of power mosfets
Abstract The voltage limitations of UMOS vs VDMOS field-effect power transistor structures have been compared using 2-dimensional, 2-carrier numerical simulation for these devices in which the channel doping varies from source to drain. The electric field distribution at the surface and in the bulk is compared for these two structures.
University of Massachusetts, Amherst, MA 01003, U.S.A. ( host institution ) +2 more
openaire +2 more sources
This work presents a magnetic bronchoscopy robot with a novel multi‐segment variable stiffness catheter. This catheter can not only move flexibly in the narrow bronchi but also harden according to the need to provide support. Combined with remote wireless magnetic field drive, it provides a more precise and effective solution for biopsy of deep lung ...
Shucong Yin +10 more
wiley +1 more source
Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]
We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz +1 more
doaj
Dual‐Field Synergistic Orientation of Carbon Fibers for High‐Efficiency Thermal Management
The sample fabricated by synergistically combining reversed electric and low magnetic fields, with photocurable PEG/PPG gel serving as the matrix, exhibits excellent machinability and flexibility. Meanwhile, the thermal conductivity enhancement efficiency of this work is 1351%, significantly superior to similar carbon fiber composite materials ...
Zujian Zhao +15 more
wiley +1 more source
Impact of QSW‐ZVS on Input EMI Filter Design in DC‐DC Converters
This paper analyzes the impact of quasi‐square wave zero voltage switching (QSW‐ZVS) on passive EMI filter design for DC‐DC buck converters. The extra element theorem (EET) is used to derive the design quantities that ensure converter performance is not altered, and the resulting damping element values are compared with those of traditional converters.
Silvia Simone +3 more
wiley +1 more source
MOSFETS Power Consumption and Power Dissipation Calculation
Abstract Metal oxide semiconductor field effect transistors are usually called MOSFET. Nowadays, MOSFET is one of the most crucial electrical components that engineers usually use when constructing laptops and desktop computers. A large number of MOSFETS are usually integrated together to form control and logic functions of computers CPU.
openaire +1 more source
As maritime transport electrifies, bidirectional charging (V2G) offers a dual‐purpose solution for energy resilience and economic viability. This work identifies key technological advancements and lifecycle challenges utilizing practical case studies to demonstrate how V2G systems can drive decarbonization and grid stability in the marine sector ...
Jonathan Bloor +3 more
wiley +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction. [PDF]
Sun T +7 more
europepmc +1 more source
Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang +6 more
wiley +1 more source

