Results 81 to 90 of about 4,174 (199)

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan, Michael Stöger‐Pollach, Georg Pfusterschmied, Ulrich Schmid   +3 more
wiley   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk, Michał Suplewski, Jacek Łubiński, Jakub Gierowski, Monika Kosowska, Mirosław Sawczak, Mattia Pierpaoli, Filip Janiak, Małgorzata Szczerska   +8 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Physical Implementation of Optical Material‐Based Neural Networks Processing Enabled by Long‐Persistent Luminescence

Advanced Science, Volume 13, Issue 31, 4 June 2026.
This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley   +1 more source

New Power MOSFET with Beyond-1D-Limit R_SP-BV Trade-Off and Superior Reverse Recovery Characteristics. [PDF]

Materials (Basel), 2020
Zhang M, Li B, Wei J.
europepmc   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET

Kongzhi Yu Xinxi Jishu, 2016
With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj  

Coaxial Dipole Array With Switching Transmit Sensitivities for Ultrahigh Field MRI

Magnetic Resonance in Medicine, Volume 95, Issue 6, Page 3608-3615, June 2026.
ABSTRACT Purpose To investigate dipole antennas with electronically switchable transmit field patterns to improve flip angle homogeneity in ultra‐high field MRI. Methods Reconfigurable dipole elements that could produce two distinct electronically switchable B1+ field profiles were conceptualized and constructed.
Dario Bosch, Georgiy A. Solomakha, Felix Glang, Martin Freudensprung, Nikolai Avdievich, Klaus Scheffler   +5 more
wiley   +1 more source

Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially ...
Salahaldein Ahmed, Pengyu Lai, Sudharsan Chinnaiyan, Alan Mantooth, Zhong Chen   +4 more
doaj   +1 more source

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

IEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source