Results 81 to 90 of about 4,215 (202)
AI‐enabled bumpless transfer control strategy for legged robot with hybrid energy storage system
CAAI Transactions on Intelligence Technology, EarlyView.Abstract Designing Hybrid energy storage system (HESS) for a legged robot is significant to improve the motion performance and energy efficiency of the robot. However, switching between the driving mode and regenerative braking mode in the HESS may generate a torque bump, which has brought significant challenges to the stability of the robot locomotion.
Zhiwu Huang +6 more
wiley +1 more source
Comparison of Dielectric Recovery After Arc Burning in SF6 Gas and Its Potential Alternatives
High Voltage, EarlyView.ABSTRACT Although sulphur hexafluoride (SF6) exhibits exceptional insulating properties, it is a potent greenhouse gas. Therefore, studying alternatives to SF6 is critical for developing environmentally friendly high‐voltage electrical equipment.
Ziqi Liu +4 more
wiley +1 more source
New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics. [PDF]
Materials (Basel), 2020 Zhang M, Li B, Wei J.
europepmc +1 more source
Advanced Engineering Materials, Volume 28, Issue 15, 5 August 2026.A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol +5 more
wiley +1 more source
Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET
Kongzhi Yu Xinxi Jishu, 2016 With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj
e-Prime: Advances in Electrical Engineering, Electronics and EnergyThe high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially ...
Salahaldein Ahmed +4 more
doaj +1 more source
From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors
physica status solidi (a), Volume 223, Issue 15, 5 August 2026.Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh +7 more
wiley +1 more source
A Module‐Level Photovoltaic Optimizer for Online I–V Curve Tracing and Daylight Photoluminescence
Advanced Sustainable Systems, Volume 10, Issue 8, August 2026.This article presents a module‐level photovoltaic optimizer based on a synchronous buck converter. The system enables non‐invasive online I–V curve tracing and daylight photoluminescence imaging. By integrating advanced diagnostic capabilities with minimal hardware modifications, this compact solution offers cost‐effective, continuous inspection ...
Alberto Redondo‐Plaza +5 more
wiley +1 more source
IEEE AccessSilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj +1 more source