Results 91 to 100 of about 50,747 (239)
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Numerical modeling of power mosfets
Solid-State Electronics, 1983 Abstract The voltage limitations of UMOS vs VDMOS field-effect power transistor structures have been compared using 2-dimensional, 2-carrier numerical simulation for these devices in which the channel doping varies from source to drain. The electric field distribution at the surface and in the bulk is compared for these two structures.
University of Massachusetts, Amherst, MA 01003, U.S.A. ( host institution ) +2 more
openaire +2 more sources
Advanced Intelligent Discovery, EarlyView.A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley +1 more source
Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction. [PDF]
Nanoscale Res Lett, 2022 Sun T +7 more
europepmc +1 more source
Radiation effects on three low-power microcircuits [PDF]
Irradiation of several low power circuit elements by Co-60 gamma radiation, low and high energy electrons, and neutrons is discussed. The bipolar circuits were SE480 Q NAND gate, and a micropower frequency divider was used in electronic wrist watches ...
Yamakawa, K. A.
core +1 more source
Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
, 2016 Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance ...
Du, Yuchen +4 more
core +1 more source
Temperature‐Tunable Cholesteric Liquid Crystal Optical Combiners for Extended Reality Applications
Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.Recent advancements in extended reality highlight their potential to enhance traditional displays like liquid crystal displays and organic light‐emitting diode screens. This article introduces an innovative cholesteric liquid crystal‐based optical combiner for head‐mounted displays, enabling seamless transitions between augmented reality, virtual ...
Yuanjie Xia +6 more
wiley +1 more source
Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles. [PDF]
Materials (Basel), 2021 Cheng HC, Lin SY, Liu YC.
europepmc +1 more source