Results 91 to 100 of about 4,174 (199)

The Effect of Power MOSFET Materials on their Switching Performance

Journal of Scientific Research in Science
Power semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies.
Asmaa S. Ibrahim, Sanaa A. Kamh, F. A. S. Soliman, Doaa H. Hanafy   +3 more
doaj   +1 more source

Arduino Nano Based SPWM (Sine Pulse Wide Modulation) Single Phase DC to AC Inverter

Protek: Jurnal Ilmiah Teknik Elektro
In off grid photovoltaic systems, the DC voltage from PV or batteries must be converted into a sinusoidal AC voltage that matches the AC voltage at home. The problem is that inverters available on the market are expensive.
budi pramono jati, Jenny Putri Hapsari
doaj   +1 more source

Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application

Power Electronic Devices and Components
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
doaj   +1 more source

Switching power losses of power MOSFETs

Electrical Engineering in Japan, 1985
Katsueda, Mineo, Iijima, Tetsuo
openaire   +1 more source

Warpage Reduction for Power MOSFET Wafers

Electrica, 2021
Kim Ho Yeap, Humaira Nisar, Veerendra Dakulagi   +2 more
doaj   +1 more source

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

Electro-Thermal Improvement in a β-Ga₂O₃ Cage-Integrated Slanted-Fin MOSFET. [PDF]

Micromachines (Basel)
Li J, Li Y, Peng K, Lu X, Ma X.
europepmc   +1 more source

Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]

Micromachines (Basel)
Li Q, Zhang Y, Huang B, Zhang W, Chen C, Lei J, Zhang D, Min R, Tong Q.   +8 more
europepmc   +1 more source

Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide. [PDF]

Nat Commun
Yang X, Porter M, Qin Y, Yang Z, Gong H, Jin L, Xi Z, Wang H, Zhu L, Zhang Y, Shao L.   +10 more
europepmc   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source