Results 111 to 120 of about 4,760,033 (232)
e-Prime: Advances in Electrical Engineering, Electronics and EnergyThe high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially ...
Salahaldein Ahmed +4 more
doaj +1 more source
Image Encoding With Blipped Gradients in an Echo Train
Magnetic Resonance in Medicine, Volume 96, Issue 5, Page 2530-2538, November 2026.ABSTRACT Purpose An MRI scanner was designed and built to encode k‐space points in the spin echoes occurring between 180∘ pulses in an echo train by using blipped B0 gradient pulses applied just prior to those spin echoes. Methods The proposed MRI scanner is a modification of an original design that used TRansmit Array Spatial Encoding (TRASE), a built‐
Logi Vidarsson, Gordon E. Sarty
wiley +1 more source
Performance comparison of Si, SiC and GaN based power MOSFET/HEMT using DC-DC boost converter
There is a rising demand for power MOSFET semiconductors with low power consumption and high energy efficiency. Wide band-gap semiconductor materials Gallium nitride (GaN) and Silicon Carbide (SiC) achieve the need of low power consumption and high ...
Pande, P +5 more
core +1 more source
IEEE AccessSilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
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Textile Metamaterials: Design, Fabrication, and Emerging Applications
Applied Research, Volume 5, Issue 5, October 2026.Textile metamaterials combine sub‐wavelength electromagnetic structures with textile architectures, enabling flexible and wearable platforms for wave manipulation. This review highlights their evolution, fabrication strategies, electromagnetic characteristics, and emerging applications, while identifying key challenges and opportunities for next ...
Samanta M. de Holanda +8 more
wiley +1 more source
physica status solidi (a), Volume 223, Issue 17, 9 September 2026.Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah +8 more
wiley +1 more source
A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations
, 2016 This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions.
Turzynski, Marek,, Kulesza, Wlodek J.,
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Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET
Kongzhi Yu Xinxi Jishu, 2016 With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj
The Effect of Power MOSFET Materials on their Switching Performance
Journal of Scientific Research in SciencePower semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies.
Asmaa S. Ibrahim +3 more
doaj +1 more source