Results 131 to 140 of about 4,215 (202)

Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C-V Investigation. [PDF]

Micromachines (Basel)
Ackermann V, El Amrani M, Mohamad B, Ben Abbes R, Charles M, Cavalaglio S, Manrique M, Buckley J, Salem B.   +8 more
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A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]

Micromachines (Basel)
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
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Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor. [PDF]

Sci Rep
Aghajani A, Karsenty A.
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A CNTFET based process variation resilient SRAM design for stable low power and half select free operation. [PDF]

Sci Rep
Haq SU, Aminzadeh A, Darabi A, Abbasian E, Shah OA, Sreenivasulu VB.   +5 more
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Social group algorithm-based MPPT coupled with phase shift resonant converter for battery charging through partially shaded PV systems. [PDF]

Sci Rep
Jayaraman J, Ramasamy S, Vadivel S, Thangavel S, Shuaibu HA, Ustun TS.   +5 more
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A novel high-gain isolated quasi Z-source DC-DC converter with self-balancing bipolar outputs. [PDF]

Sci Rep
Heidarbozorg S, Radmanesh H.
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Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
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Power capability limits of power MOSFET devices

Microelectronics Reliability, 2002
Abstract With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power capability limit of the semiconductor devices in both transient and steady-state operations ...
Young S. Chung, Bob Baird
openaire   +1 more source

ON-Resistance of Power MOSFETs

2006 International Conference - Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006
This paper deals with modelling of the drain-to-source ON-Resistance (Ron) of power MOSFETs. Two kinds of the transistor structures: VDMOS and CoolMOS made of a silicon and a silicon-carbide are considered in the paper.
Janusz Zarebski, Rafal Zarebski
openaire   +1 more source