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A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]
Micromachines (Basel)Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
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Social group algorithm-based MPPT coupled with phase shift resonant converter for battery charging through partially shaded PV systems. [PDF]
Sci RepJayaraman J +5 more
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Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]
Materials (Basel)Roccaforte F.
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A portable, ultra-low cost, open-source, pedal-controlled microinjector for laboratory use. [PDF]
PLoS OneDominguez VH +4 more
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A novel high-gain isolated quasi Z-source DC-DC converter with self-balancing bipolar outputs. [PDF]
Sci RepHeidarbozorg S, Radmanesh H.
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Power capability limits of power MOSFET devices
Microelectronics Reliability, 2002Abstract With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power capability limit of the semiconductor devices in both transient and steady-state operations ...
Young S. Chung, Bob Baird
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1979 International Electron Devices Meeting, 1979
The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
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The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
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ON-Resistance of Power MOSFETs
2006 International Conference - Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006This paper deals with modelling of the drain-to-source ON-Resistance (Ron) of power MOSFETs. Two kinds of the transistor structures: VDMOS and CoolMOS made of a silicon and a silicon-carbide are considered in the paper.
Janusz Zarebski, Rafal Zarebski
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