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A new high voltage power MOSFET for power conversion applications
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances.
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Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370), 2003
With the increase in operating frequency as well as voltage and current levels, power devices have to sustain a number of stress causing phenomena. For proper selection for an application, the specifications for the device need to given with emphasis on the kind of stresses it will be subjected to in the application.
N. Keskar, M. Trivedi, K. Shenai
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With the increase in operating frequency as well as voltage and current levels, power devices have to sustain a number of stress causing phenomena. For proper selection for an application, the specifications for the device need to given with emphasis on the kind of stresses it will be subjected to in the application.
N. Keskar, M. Trivedi, K. Shenai
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2011
The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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Turn-off failure of power MOSFETs
1985 IEEE Power Electronics Specialists Conference, 1985Experimental results of the failure of power MOSFET's during inductive turn-off are discussed. The electrical characteristics of these devices during failure are shown to be identical to those of a bipolar transistor undergoing second breakdown. Other comparisons of the power MOSFET failure and bipolar second breakdown are made.
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