Results 151 to 160 of about 4,174 (199)

Wideband driver for power MOSFETs†

International Journal of Electronics, 1984
Abstract A power MOSFET drive circuit which is not referenced to ground and which is suitable for wideband applications is reported. Biasing power and triggering signals are transformer-coupled separately to achieve electrical isolation between the driving circuitry and the controlled power stage.
C. F. CHRISTIANSEN, M. I. VALLA, N. H. MARTÍNEZ   +2 more
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Dynamic SOA of power MOSFETs

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370), 2003
With the increase in operating frequency as well as voltage and current levels, power devices have to sustain a number of stress causing phenomena. For proper selection for an application, the specifications for the device need to given with emphasis on the kind of stresses it will be subjected to in the application.
N. Keskar, M. Trivedi, K. Shenai
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Turn-off failure of power MOSFETs

1985 IEEE Power Electronics Specialists Conference, 1985
Experimental results of the failure of power MOSFET's during inductive turn-off are discussed. The electrical characteristics of these devices during failure are shown to be identical to those of a bipolar transistor undergoing second breakdown. Other comparisons of the power MOSFET failure and bipolar second breakdown are made.
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Some issues of power MOSFETs

1982 IEEE Power Electronics Specialists conference, 1982
Several recent studies of power MOSFETs are discussed in this paper: (a) The second-breakdown of power MOSFETs is shown to be triggered by the turn-on of the parasitic bipolar transistor, (b) The I-V characteristics of power MOSFETs operating in reverse mode (such as when used as a synchronous rectifier) are studied, (c) A H5°-spreadingangle model for ...
Min-hwa Chi, Chenming Hu
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Power MOSFET Performance

2011
The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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Reliability analysis of power MOSFET

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy, 2014
As an indispensible part of electronic equipment, the reliability of the whole system is affected by the degradation performance of power MOSFET tube. Based on geometry, material properties and boundary conditions, the repeated testing can be reduced, and the period of failure analysis can be shortened. This article is based on the finite element model
Peisheng Liu, Jinxin Huang, Ying Lu, Longlong Yang   +3 more
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Power MOSFET failure mechanisms

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), 2005
Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two failure mechanisms reviewed result from high dV/sub DS//dt. The third failure mechanism results from the slow reverse recovery of the MOSFET body diode and the fourth is a single event breakdown due to inadequate ...
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Cryogenic MOSFET power conversion

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, 2003
Possible applications of low-temperature electronics in the field of cryogenic power conversion are examined. Full-bridge amplifiers were built and tested at liquid-nitrogen temperature. Transistor conduction and switching losses are analyzed and compared for 300 K and 77 K. The effect of low-temperature operation on overall power conversion efficiency
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Power MOSFET failure revisited

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference, 2003
The failure of power MOSFETs during avalanche breakdown is discussed. A theory is presented that relates the failure to the temperature rise of the chip during the avalanche breakdown and to a critical current for failure. It is shown that the energy that can be safely dissipated during avalanche breakdown decreases as the starting current increases or
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Power MOSFETs

2023
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