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Analysis of Superjunction MOSFET (CoolMOS<sup>TM</sup>) Concept Limitations-Part II: Simulations. [PDF]
Materials (Basel)Lisik Z, Podgórski J.
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Addressing a Special Case of Zero-Crossing Range Adjustment Detection in a Passive Autoranging Circuit for the FBG/PZT Photonic Current Transducer. [PDF]
Sensors (Basel)Mir B, Fusiek G, Niewczas P.
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Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. [PDF]
Sensors (Basel)Bianchini C +3 more
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Temperature control board design and validation for skipper-CCD sensors using a buck converter. [PDF]
HardwareXBarrientos M +7 more
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1979 International Electron Devices Meeting, 1979
The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
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The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
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Power Mosfet And Power Diode Models
[Proceedings] 1990 IEEE Workshop on Computers in Power Electronics, 2005Equations derived from simplified device physics are used to implement power device models for circuit simulators. Expressions for the MOSFET capacitances Cgd(v) and Cgs(v) are based on the deltadepletion model for the gate-drain interface. For the diode, the basic charge-control model used in SPICE is extended to include reverse recovery.
C.L. Ma, P.O. Lauritzen, null Jigang Ong
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Self-Thermal Protecting Power MOSFETs
SAE Technical Paper Series, 1987<div class="htmlview paragraph">A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.</div>
Y. Tsuzuki, M. Yamaoka, K. Kawamoto
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Power MOSFET Verilog modelling
2016 12th IEEE International Symposium on Electronics and Telecommunications (ISETC), 2016Power MOSFETs are electronic devices used for modern switches. The complexity of mixed-signal system-on-chip using power MOSFETs has increased. Advanced analog and digital interfaces, tough requirements for their safety and reliability impose new advanced methodologies for their simulations.
Lidia Dobrescu +2 more
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