Results 171 to 180 of about 4,760,033 (232)

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source

Multi-Objective Optimization for Through-Silicon via Structure Considering Thermomechanical Reliability and Electrical Performance. [PDF]

Micromachines (Basel)
Chen S, Hu W, Xue S, Zhang Q, Mu J, Liu S, Wu W, Diwu D, Wang C.   +8 more
europepmc   +1 more source

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Power capability limits of power MOSFET devices

Microelectronics Reliability, 2002
Abstract With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power capability limit of the semiconductor devices in both transient and steady-state operations ...
Young S. Chung, Bob Baird
openaire   +1 more source

ON-Resistance of Power MOSFETs

2006 International Conference - Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006
This paper deals with modelling of the drain-to-source ON-Resistance (Ron) of power MOSFETs. Two kinds of the transistor structures: VDMOS and CoolMOS made of a silicon and a silicon-carbide are considered in the paper.
Janusz Zarebski, Rafal Zarebski
openaire   +1 more source

Power MOSFET technology

1979 International Electron Devices Meeting, 1979
The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
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Power Mosfet And Power Diode Models

[Proceedings] 1990 IEEE Workshop on Computers in Power Electronics, 2005
Equations derived from simplified device physics are used to implement power device models for circuit simulators. Expressions for the MOSFET capacitances Cgd(v) and Cgs(v) are based on the deltadepletion model for the gate-drain interface. For the diode, the basic charge-control model used in SPICE is extended to include reverse recovery.
C.L. Ma, P.O. Lauritzen, null Jigang Ong
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A simple SiC power MOSFET model

IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017
With the application of SiC power metal-oxide-semiconductor field-effect transistor (MOSFET) in high voltage power converters, switching frequency and speed increase. Thus, severe electromagnetic interference(EMI) problems occur. To predict EMI performances and evaluate other performances in the design phase, a simple and valid switch model is needed ...
Zhuolin Duan, Dong Zhang, Tao Fan, Xuhui Wen   +3 more
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BAMBI -- A Design Model for Power MOSFET's

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
Numerical simulation models are utilized for the development and the design of semiconductor devices to a steadily growing extent. However, the simulation programs to date are known only to be handled under some restrictions. This paper presents the novel program system BAMBI, capable of simulating the two-dimensional transient behavior of arbitrarily ...
A. F. Franz, G. A. Franz
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New considerations for MOSFET power clamps

Microelectronics Reliability, 2003
Abstract Two ESD clamp circuit design techniques have been developed to reduce cell size and to combat the effects of gate leakage that have become significant in recent generations of digital CMOS process technology. Such clamps have proven to be able to withstand HBM stresses of 6 kV and CDM pulses of 1.2 kV.
Steven S. Poon, Timothy J. Maloney
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Self-Thermal Protecting Power MOSFETs

SAE Technical Paper Series, 1987
<div class="htmlview paragraph">A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.</div>
Y. Tsuzuki, M. Yamaoka, K. Kawamoto
openaire   +1 more source