Results 191 to 200 of about 50,747 (239)
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Nanosecond switching using power MOSFETs
Review of Scientific Instruments, 1990It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of >800 V into 50 Ω with rise times of approximately 3 ns.
R. J. Baker, M. D. Pocha
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Cryogenic MOSFET power conversion
Proceedings of the Workshop on Low Temperature Semiconductor Electronics, 2003Possible applications of low-temperature electronics in the field of cryogenic power conversion are examined. Full-bridge amplifiers were built and tested at liquid-nitrogen temperature. Transistor conduction and switching losses are analyzed and compared for 300 K and 77 K. The effect of low-temperature operation on overall power conversion efficiency
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SiC Power MOSFET modeling challenges
2012 Students Conference on Engineering and Systems, 2012SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in ...
Rajendra Pratap +2 more
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Asymmetric gate resistor power MOSFET
2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012Power converters, e.g. in a popular synchronous buck topology, need high performance power MOSFETs in order to achieve high efficiency, low voltage ringing, ESD protection and low EMI. To satisfy these requirements, an asymmetric gate resistor power MOSFET is proposed by integrating a shunt resistor with a parallel LDMOSFET-connected diode in a source ...
Jun Wang +3 more
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Reliability analysis of power MOSFET
2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy, 2014As an indispensible part of electronic equipment, the reliability of the whole system is affected by the degradation performance of power MOSFET tube. Based on geometry, material properties and boundary conditions, the repeated testing can be reduced, and the period of failure analysis can be shortened. This article is based on the finite element model
Peisheng Liu +3 more
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Turn-off failure of power MOSFETs
1985 IEEE Power Electronics Specialists Conference, 1985Experimental results of the failure of power MOSFET's during inductive turn-off are discussed. The electrical characteristics of these devices during failure are shown to be identical to those of a bipolar transistor undergoing second breakdown. Other comparisons of the power MOSFET failure and bipolar second breakdown are made.
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Thermal effects in power MOSFETs
CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005Over the year the state-of-the-art technologies pushed the VLSI chips to higher clock speed and packing density having a direct impact on the on-chip temperature rise. Without good thermal engineering, significantly non-uniform temperature distribution can lead to considerable on-chip temperature gradient.
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