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Advances in SiC power MOSFET technology
Microelectronics Reliability, 2003Abstract In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform.
Sima Dimitrijev, Philippe Jamet
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Thermal instability of low voltage power-MOSFETs
30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321), 2000Anomalous failures which occurred inside the theoretical forward biased safe operating area of the latest generation low voltage power MOS devices are reported and analyzed. The paper outlines how some technology improvements, while increasing the current capability, can induce thermal instability phenomena at low drain currents.
A. CONSOLI +6 more
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Electric and Hybrid Vehicle Technology International, 2018
High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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A new high voltage power MOSFET for power conversion applications
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances.
GALLUZZO A +4 more
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2011
The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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Turn-off failure of power MOSFETs
1985 IEEE Power Electronics Specialists Conference, 1985Experimental results of the failure of power MOSFET's during inductive turn-off are discussed. The electrical characteristics of these devices during failure are shown to be identical to those of a bipolar transistor undergoing second breakdown. Other comparisons of the power MOSFET failure and bipolar second breakdown are made.
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