Results 181 to 190 of about 50,747 (239)
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Electric and Hybrid Vehicle Technology International, 2018
High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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Power MOSFET failure mechanisms
2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), 2005Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two failure mechanisms reviewed result from high dV/sub DS//dt. The third failure mechanism results from the slow reverse recovery of the MOSFET body diode and the fourth is a single event breakdown due to inadequate ...
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Energy efficient power MOSFETs
2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(
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Power MOSFET failure revisited
PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference, 2003The failure of power MOSFETs during avalanche breakdown is discussed. A theory is presented that relates the failure to the temperature rise of the chip during the avalanche breakdown and to a critical current for failure. It is shown that the energy that can be safely dissipated during avalanche breakdown decreases as the starting current increases or
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Thermal instability of low voltage power-MOSFETs
30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321), 2000Anomalous failures which occurred inside the theoretical forward biased safe operating area of the latest generation low voltage power MOS devices are reported and analyzed. The paper outlines how some technology improvements, while increasing the current capability, can induce thermal instability phenomena at low drain currents.
A. CONSOLI +6 more
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Power capability limits of power MOSFET devices
Microelectronics Reliability, 2002Abstract With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power capability limit of the semiconductor devices in both transient and steady-state operations ...
Young S Chung, Bob Baird
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2011
The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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2007
This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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A new high voltage power MOSFET for power conversion applications
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances.
GALLUZZO A +4 more
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Wideband driver for power MOSFETs†
International Journal of Electronics, 1984Abstract A power MOSFET drive circuit which is not referenced to ground and which is suitable for wideband applications is reported. Biasing power and triggering signals are transformer-coupled separately to achieve electrical isolation between the driving circuitry and the controlled power stage.
C. F. CHRISTIANSEN +2 more
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