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Power Mosfet And Power Diode Models
[Proceedings] 1990 IEEE Workshop on Computers in Power Electronics, 2005Equations derived from simplified device physics are used to implement power device models for circuit simulators. Expressions for the MOSFET capacitances Cgd(v) and Cgs(v) are based on the deltadepletion model for the gate-drain interface. For the diode, the basic charge-control model used in SPICE is extended to include reverse recovery.
C.L. Ma, P.O. Lauritzen, null Jigang Ong
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A simple SiC power MOSFET model
IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017With the application of SiC power metal-oxide-semiconductor field-effect transistor (MOSFET) in high voltage power converters, switching frequency and speed increase. Thus, severe electromagnetic interference(EMI) problems occur. To predict EMI performances and evaluate other performances in the design phase, a simple and valid switch model is needed ...
Zhuolin Duan +3 more
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Advances in SiC power MOSFET technology
Microelectronics Reliability, 2003Abstract In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform.
Sima Dimitrijev, Philippe Jamet
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BAMBI -- A Design Model for Power MOSFET's
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985Numerical simulation models are utilized for the development and the design of semiconductor devices to a steadily growing extent. However, the simulation programs to date are known only to be handled under some restrictions. This paper presents the novel program system BAMBI, capable of simulating the two-dimensional transient behavior of arbitrarily ...
A. F. Franz, G. A. Franz
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New considerations for MOSFET power clamps
Microelectronics Reliability, 2003Abstract Two ESD clamp circuit design techniques have been developed to reduce cell size and to combat the effects of gate leakage that have become significant in recent generations of digital CMOS process technology. Such clamps have proven to be able to withstand HBM stresses of 6 kV and CDM pulses of 1.2 kV.
Steven S. Poon, Timothy J. Maloney
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2007
This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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Electric and Hybrid Vehicle Technology International, 2018
High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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Thermal instability of low voltage power-MOSFETs
30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321), 2000Anomalous failures which occurred inside the theoretical forward biased safe operating area of the latest generation low voltage power MOS devices are reported and analyzed. The paper outlines how some technology improvements, while increasing the current capability, can induce thermal instability phenomena at low drain currents.
A. CONSOLI +6 more
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A new high voltage power MOSFET for power conversion applications
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances.
GALLUZZO A +4 more
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Self-Thermal Protecting Power MOSFETs
SAE Technical Paper Series, 1987<div class="htmlview paragraph">A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.</div>
Y. Tsuzuki, M. Yamaoka, K. Kawamoto
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