Results 71 to 80 of about 50,747 (239)
Advanced Science, EarlyView.This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley +1 more source
Low-Frequency Noise Phenomena in Switched MOSFETs [PDF]
, 2007 In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects.
Hoekstra, Eric +7 more
core +3 more sources
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
An Intelligent Auxiliary Vacuum Brake System [PDF]
, 2009 The purpose of this paper focuses on designing an intelligent, compact, reliable, and robust auxiliary vacuum brake system (VBS) with Kalman filter and self-diagnosis scheme.
Li, Jiun-Yi +3 more
core
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
Perspective of buried oxide thickness variation on triple metal-gate (TMG) recessed-S/D FD-SOI MOSFET [PDF]
, 2018 Recently, Fully-Depleted Silicon on Insulator (FD-SOI) MOSFETs have been accepted as a favourable technology beyond nanometer nodes, and the technique of Recessed-Source/Drain (Re-S/D) has made it more immune in regards of various performance factors ...
Mishra, Ram Awadh +2 more
core +2 more sources
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Device-Circuit Level Simulation Study of Three Inputs Complex Logic Gate Designed Using Nano-MOSFETs
Applications of Modelling and Simulation, 2019 Simulation study on silicon-based nano-MOSFETs logic circuits is needed to add more knowledge on the nanoscale circuit performance. Therefore, in this paper, simulation study is carried out on three inputs complex logic gate transistor circuits with four
Ooi Chek Yee
doaj
Undergraduate Journal of Mathematical Modeling: One + Two, 2010 A MOSFET is defined as metal oxide semiconductor field effect transistor. These electrical components are combined or integrated to form control and logic functions for laptop and desktop computers, power controls in printing devices, motor controls and ...
Frederick Selkey
doaj +1 more source
A describing function for resonantly commutated H-bridge inverters [PDF]
, 2004 —The paper presents the derivation of a describing function to model the dynamic behavior of a metal oxide semiconductor field effect transistor-based, capacitively commutated H-bridge, including a comprehensive explanation of the various stages in the ...
Bingham, Chris, Sewell, H I, Stone, D A
core +1 more source