Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT [PDF]
Micromachines, 2023 This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time.
Song Yuan +5 more
doaj +4 more sources
The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
Power Electronic Devices and Components, 2022 Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from ...
H Kang, N Donato, F Udrea
exaly +4 more sources
A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench [PDF]
Micromachines, 2022 In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented.
Zhen Cao +5 more
doaj +2 more sources
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures [PDF]
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
doaj +2 more sources
A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer [PDF]
Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
doaj +2 more sources
A FIN-LDMOS with Bulk Electron Accumulation Effect [PDF]
Micromachines, 2023 A thin Silicon-On-Insulator (SOI) LDMOS with ultralow Specific On-Resistance (Ron,sp) is proposed, and the physical mechanism is investigated by Sentaurus.
Weizhong Chen +4 more
doaj +2 more sources
Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs [PDF]
MicromachinesThis study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °
Wenrong Cui +6 more
doaj +2 more sources
Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]
MicromachinesThis paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang +2 more
doaj +2 more sources
Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective [PDF]
Micromachines, 2023 The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional ...
Tao Liu +7 more
doaj +2 more sources
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations [PDF]
MicromachinesSuperjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV).
Marco Boccarossa +8 more
doaj +2 more sources