Results 11 to 20 of about 613 (170)

On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept [PDF]

IEEE Electron Device Letters, 2017
In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward the cathode side is shown to pose a tradeoff between fabrication technology capabilities (and cost) versus the device ...
Marina Antoniou, Neophytos Lophitis, F Udrea   +2 more
exaly   +10 more sources

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +2 more sources

Recent research progress of SiC superjunction devices [PDF]

机车电传动, 2023
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping, ZHANG Kun, CHEN Wei, WANG Jie, ZHANG Bo   +4 more
doaj   +3 more sources

Simple analytical model for accurate switching loss calculation in power MOSFETs using non‐linearities of Miller capacitance

IET Power Electronics, 2022
A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage.
Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, José Renes Pinheiro   +3 more
doaj   +2 more sources

Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET [PDF]

Micromachines
This paper presents a machine learning-based figure of merit model for superjunction (SJ) U-MOSFET (SSJ-UMOS) with a modulated drift region utilizing semi-insulating poly-crystalline silicon (SIPOS) pillars.
Zhen Cao, Qi Sun, Chuanfeng Ma, Biao Hou, Licheng Jiao   +4 more
doaj   +2 more sources

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure [PDF]

Micromachines, 2022
In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS.
Yuan Li, Liang Xu, Zhiyou Guo, Huiqing Sun   +3 more
doaj   +2 more sources

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor

Power Electronic Devices and Components, 2023
In this paper, the origin of the gate oscillations with a stray capacitance in the load inductor is analyzed with a device/circuit mix-mode simulation. It is found that the gate ringing occurs when the superjunction device reaches its pinch-off potential
H Kang, F Udrea
exaly   +3 more sources

The Avalanche-Mode Superjunction LED [PDF]

IEEE Transactions on Electron Devices, 2017
Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si photodiodes. These EL spectra depend on the reverse electric field.
Satadal Dutta, Peter G. Steeneken, Vishal Agarwal, Jurriaan Schmitz, Anne-Johan Annema, Raymond J. E. Hueting   +5 more
openaire   +7 more sources

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces
In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
doaj   +2 more sources

Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices [PDF]

Fundamental Research
Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates, Gallium oxide (Ga2O3) holds great promise for power electronic and radio frequency (RF) applications.
Bochang Li, Yibo Wang, Zhengdong Luo, Wenhui Xu, Hehe Gong, Tiangui You, Xin Ou, Jiandong Ye, Yue Hao, Genquan Han   +9 more
doaj   +2 more sources