Results 11 to 20 of about 733 (170)

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +2 more sources

Simple analytical model for accurate switching loss calculation in power MOSFETs using non‐linearities of Miller capacitance

IET Power Electronics, 2022
A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage.
Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, José Renes Pinheiro   +3 more
doaj   +2 more sources

Theory of Superjunction Devices [PDF]

, 2020
Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superjunction MOSFET by Infineon technology in 1998, the technology and the understanding of superjunction devices have been gradually progressed. Although Fujihira’s ideal model was developed to estimate the specific on-state resistance at a given cell pitch ...
openaire   +4 more sources

Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET. [PDF]

Micromachines (Basel)
This paper presents a machine learning-based figure of merit model for superjunction (SJ) U-MOSFET (SSJ-UMOS) with a modulated drift region utilizing semi-insulating poly-crystalline silicon (SIPOS) pillars.
Cao Z, Sun Q, Ma C, Hou B, Jiao L.
europepmc   +2 more sources

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure. [PDF]

Micromachines (Basel), 2022
In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS.
Li Y, Xu L, Guo Z, Sun H.
europepmc   +2 more sources

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor

Power Electronic Devices and Components, 2023
In this paper, the origin of the gate oscillations with a stray capacitance in the load inductor is analyzed with a device/circuit mix-mode simulation. It is found that the gate ringing occurs when the superjunction device reaches its pinch-off potential
Florin Udrea, Hyemin Kang
exaly   +3 more sources

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces
In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
doaj   +2 more sources

Gallium oxide (Ga₂O₃) heterogeneous and heterojunction power devices. [PDF]

Fundam Res
Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates, Gallium oxide (Ga2O3) holds great promise for power electronic and radio frequency (RF) applications.
Li B, Wang Y, Luo Z, Xu W, Gong H, You T, Ou X, Ye J, Hao Y, Han G.   +9 more
europepmc   +2 more sources

Analog/RF and Distortion Characteristics of Recessed Superjunction AlGaN/GaN HEMTs

IET Circuits, Devices and Systems
In this work, we investigate the impact of the recessed height of the i-gallium nitride (GaN) layer on the performance of superjunction AlGaN/GaN high electron mobility transistors (HEMTs).
Nahida Banu, Chandrima Mondal, Abhijit Biswas   +2 more
doaj   +2 more sources

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of Power Electronics, 2021
In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil Mellor   +5 more
doaj   +1 more source