Results 11 to 20 of about 178 (144)

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]

Micromachines
This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang, Jia-Wei Hu, Chih-Fang Huang   +2 more
doaj   +2 more sources

Simple analytical model for accurate switching loss calculation in power MOSFETs using non‐linearities of Miller capacitance

IET Power Electronics, 2022
A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage.
Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, José Renes Pinheiro   +3 more
doaj   +2 more sources

Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET [PDF]

Micromachines
This paper presents a machine learning-based figure of merit model for superjunction (SJ) U-MOSFET (SSJ-UMOS) with a modulated drift region utilizing semi-insulating poly-crystalline silicon (SIPOS) pillars.
Zhen Cao, Qi Sun, Chuanfeng Ma, Biao Hou, Licheng Jiao   +4 more
doaj   +2 more sources

A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

Crystals, 2022
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Hongyu Yu, Wenmao Li, Chenkai Deng
exaly   +3 more sources

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure [PDF]

Micromachines, 2022
In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS.
Yuan Li, Liang Xu, Zhiyou Guo, Huiqing Sun   +3 more
doaj   +2 more sources

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor

Power Electronic Devices and Components, 2023
In this paper, the origin of the gate oscillations with a stray capacitance in the load inductor is analyzed with a device/circuit mix-mode simulation. It is found that the gate ringing occurs when the superjunction device reaches its pinch-off potential
Florin Udrea, Hyemin Kang
exaly   +3 more sources

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces
In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
doaj   +2 more sources

Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices [PDF]

Fundamental Research
Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates, Gallium oxide (Ga2O3) holds great promise for power electronic and radio frequency (RF) applications.
Bochang Li, Yibo Wang, Zhengdong Luo, Wenhui Xu, Hehe Gong, Tiangui You, Xin Ou, Jiandong Ye, Yue Hao, Genquan Han   +9 more
doaj   +2 more sources

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of Power Electronics, 2021
In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil Mellor   +5 more
doaj   +1 more source

The Avalanche-Mode Superjunction LED [PDF]

IEEE Transactions on Electron Devices, 2017
Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si photodiodes. These EL spectra depend on the reverse electric field.
Satadal Dutta, Peter G. Steeneken, Vishal Agarwal, Jurriaan Schmitz, Anne-Johan Annema, Raymond J. E. Hueting   +5 more
openaire   +4 more sources