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Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure [PDF]

Heliyon, 2023
The two-dimensional MoSi2N4 monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability.
Jinglin Xia, Yixiao Gu, Jun Mai, Tianyang Hu, Qikun Wang, Chao Xie, Yunkai Wu, Xu Wang   +7 more
doaj   +2 more sources

Janus VSSi as an efficient 2D electrode for Sb2C3 with tunable Schottky contact: a first-principles study [PDF]

RSC Advances
Two-dimensional (2D) metal/semiconductor van der Waals (vdW) heterostructures have attracted significant attention for next-generation nanoelectronic devices due to their tunable interfacial properties.
Ho Kim Dan, Huynh Thi Phuong Thuy, Le Phuong Long, Le Phuoc Dinh, Nguyen D. Hien, Khang D. Pham   +5 more
doaj   +2 more sources

Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations

Results in Physics, 2023
The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility
Shaofeng Zhang, Zhaowu Wang
doaj   +1 more source

Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

AIP Advances, 2021
A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic emission
Bhishma Pandit, Jaeho Kim, Jaehee Cho
doaj   +1 more source

Tunable Contact Types and Interfacial Electronic Properties in TaS₂/MoS₂ and TaS₂/WSe₂ Heterostructures

Molecules, 2023
Following the successful experimental synthesis of single-layer metallic 1T-TaS2 and semiconducting 2H-MoS2, 2H-WSe2, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-
Xiangjiu Zhu, Hongxing Jiang, Yukai Zhang, Dandan Wang, Lin Fan, Yanli Chen, Xin Qu, Lihua Yang, Yang Liu   +8 more
doaj   +1 more source

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Nanoscale Research Letters, 2020
Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes.
Yu Lan, Li-Xin Xia, Tao Huang, Weiping Xu, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang   +6 more
doaj   +1 more source

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

IEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna   +5 more
doaj   +1 more source

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE Journal of the Electron Devices Society, 2021
A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch commercial foundry with three (Linear, Hexagonal, and Octagonal) cell topologies.
Aditi Agarwal, Kijeong Han, B. J. Baliga
doaj   +1 more source

Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

npj 2D Materials and Applications, 2023
Metal contacts form one of the main limitations for the introduction of 2D materials in next-generation scaled devices. Through ab-initio simulation techniques, we shed light on the fundamental physics and screen several 2D and 3D top and side contact ...
Rutger Duflou, Geoffrey Pourtois, Michel Houssa, Aryan Afzalian   +3 more
doaj   +1 more source

Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge

IEEE Journal of the Electron Devices Society, 2023
Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge.
Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, Keisuke Yamamoto   +5 more
doaj   +1 more source