Results 1 to 10 of about 14,138 (303)
Nanomaterials, 2018 ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal⁻ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration also
Abu ul Hassan Sarwar Rana +1 more
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NanomaterialsConstructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field ...
Zhe Zhang +3 more
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Micromachines, 2022 This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
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Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes
Lietuvos Matematikos Rinkinys, 2002 In this paper we offer methods for estimation parameters of diodes of the Schottky by comparing outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a ...
Albertas Pincevičius +1 more
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Evaluation of SiC Schottky Diodes Using Pressure Contacts [PDF]
IEEE Transactions on Industrial Electronics, 2017 The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although
Jose Angel Ortiz Gonzalez +7 more
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Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]
AIP AdvancesWe conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha +7 more
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Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
N. Nanda Kumar Reddy, V. Rajagopal Reddy
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Determination of contact parameters of Ni/n-GaP Schottky contacts
Microelectronics Reliability, 2012 Abstract The electrical analysis of Ni/n-GaP structure has been investigated by means of current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) measurements in the temperature range of 120–320 K in dark conditions. The forward bias I–V characteristics have been analyzed on the basis of standard thermionic emission (TE ...
Songul Duman +3 more
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Beilstein Journal of Nanotechnology, 2011 The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic ...
Masao Kaneko +2 more
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A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers
Crystals, 2021 Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The
Pei-Te Lin +8 more
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