Results 31 to 40 of about 1,741,103 (246)

The contacts between two-dimensional materials and metal electrodes

Nano Research
The advent of two-dimensional (2D) materials has ushered in a new era for electronic and optoelectronic devices. However, their atomic-scale thickness presents a fundamental contact interface challenge: the formation of a Schottky barrier at the 2D ...
Yingpeng Gao, Yuhua Ma, Chao Chang, Lele Li, Jing Liang, Xu Zhou, Xiaozhi Xu   +6 more
doaj   +1 more source

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications

, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core   +2 more sources

First-Principles Study on the Modulation of Schottky Barrier in Graphene/Janus MoSSe Heterojunctions by Interface Contact and Electric Field Effects

Nanomaterials
Constructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field ...
Zhe Zhang, Jiahui Li, Xiaopei Xu, Guodong Shi   +3 more
doaj   +1 more source

Growth Condition-Oriented Defect Engineering for Changes in Au–ZnO Contact Behavior from Schottky to Ohmic and Vice Versa

Nanomaterials, 2018
ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal⁻ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration also
Abu ul Hassan Sarwar Rana, Hyun-Seok Kim   +1 more
doaj   +1 more source

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

Micromachines, 2022
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
doaj   +1 more source

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides [PDF]

, 2003
Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects.
Hartog, H.W. den,, Den Hartog, H W, Vainshtein, D I, Dubinko, [No Value], Vainshtein, DI, Dubinko, V.I.,, Den Hartog, HW, Dubinko, V I, Vainshtein, D.I.,   +8 more
core   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

MXenes Contacts for p-type 2D Electronics. [PDF]

Adv Sci (Weinh)
Solution‐processed MXene contacts are engineered for p‐type 2H‐MoTe2 transistors. By comparing Ti3C2Tx, Nb2CTx, and Mo2CTx, Nb2CTx is identified as the best‐performing contact among the MXenes examined in this work, offering favorable work‐function alignment, low contact resistance, and near‐ohmic hole injection for scalable 2D electronics.
Guo T, Chen M, Wang Y, Liu C, Xu X, Luo L, Zhu D, Chu N, Zhang X, Caraveo A, Anthopoulos TD, Zhang X, Alshareef HN.   +12 more
europepmc   +2 more sources

Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode

, 2009
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the ...
Husain, Muhammad, Li, Xiaoli V., de Groot, Cornelis H.   +2 more
core   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source