Results 31 to 40 of about 14,138 (303)
Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability [PDF]
APL Electronic DevicesA gallium oxide (Ga2O3)–nickel oxide (NiO) merged PiN Schottky (MPS) diode was fabricated using Ga flux plasma-free etch and platinum oxide (PtOx) contacts.
Marko J. Tadjer +13 more
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Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes
Materials Research Express, 2023 The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs).
Min-Yeong Kim +5 more
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Frontiers in Materials, 2020 Despite the intensive study on the promotion of device performance, the device physics regarding the effects of Schottky barrier on the charge injection in conjugated polymer transistors still need more discussions.
Yang Xu, Fanming Huang, Wenwu Li
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AIP Advances, 2018 We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe
Moh’d Rezeq +5 more
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Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
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APL Materials, 2014 n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts.
von Wenckstern, Holger +5 more
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In-nSiC schottky photodiode ; Fabrication and Study [PDF]
Engineering and Technology Journal, 2008 In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated .
Khalid Z. Yahiya +2 more
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Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts
IEEE Journal of the Electron Devices Society, 2017 Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
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Materials Research Express, 2022 Wet chemical treatment is a conventional surface cleaning method, and metal oxide photocatalysts are commonly used to decompose organic compounds in water.
Koji Abe
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