Results 51 to 60 of about 14,138 (303)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Homogenous FACsPbI3 Perovskite Solar Cells Enabled by a Seed‐Facilitated Cation Exchange Strategy

open access: yesAdvanced Functional Materials, EarlyView.
A novel seed‐facilitated cation exchange strategy is designed for homogenous FACsPbI3 perovskites using the biomass‐derived solvent γ‐valerolactone. Pre‐deposited 0D Cs4PbI6 seeds induce rapid nucleation and efficient cation exchange, producing a uniform FA–Cs distribution and significantly reducing defect density, enabling high‐performance and stable ...
Meng Ren   +10 more
wiley   +1 more source

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

open access: yesAdvanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus   +8 more
wiley   +1 more source

Chlorination‐Enabled Oxygen Control and Dual‐Sulfur Source Aided Trap Passivation to Unlock 8.24% Efficient Sb2S3 Photovoltaic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates a scalable, low‐temperature synthesis strategy that combines a thioacetamide (TA)‐based dual sulfur source with CdS chlorination, enabling the formation of high‐quality Sb2S3 with a reduced open‐circuit voltage loss, resulting in improved device efficiency.
Vijay C. Karade   +16 more
wiley   +1 more source

Self‐Adaptive Anhydrous Passivation Mitigates Open‐Circuit Voltage Loss in Pb‐Sn Mixed Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
In this report, a self‐adaptive anhydrous passivation strategy is introduced by incorporating trimellitic anhydride (TMAH) into the perovskite precursor. In situ hydrolysis of TMAH yields trimellitic acid (TMA); ‐C═O/‐COO− groups of TMAH/TMA form a chelate with undercoordinated Pb2+/Sn2+, regulate nucleation, promote (100) orientation, passivate ...
Md. Ataur Rahman   +6 more
wiley   +1 more source

DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode

open access: yes, 2012
In device technology, the multilayer contacts provide improved performance. The comparative study of different high work function bilayer Schottky metal (Pt/Pd, Pt/Ni and Pt/Ti) contact has been taken to study the DC and RF performance of n-GaN Schottky ...
M.J. Abdullah   +3 more
core   +1 more source

Designed Lewis Acid–Base Passivation for High Performance Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Silicon's high cost and long energy payback time remain major barriers to the global expansion of solar power. In contrast, metal–halide perovskites offer abundant, solution‐processable absorbers, and have achieved efficiencies of 25%–30%, positioning them as strong competitors to silicon.
Afna Manaf   +4 more
wiley   +1 more source

A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors

open access: yesAdvanced Electronic Materials, 2023
A single‐device method is reported for extracting gate‐ and/or drain‐voltage‐dependent contact resistance of thin‐film transistors (TFTs). An extended transition‐voltage method is proposed and verified by experiments of all‐carbon‐nanotube thin‐film ...
Dexing Liu   +7 more
doaj   +1 more source

IrO2 Schottky contact on n-type 4H-SiC

open access: yes, 2018
A thermally stable IrO2 Schottky contact on n-type 4H-SiC was achieved by annealing an Ir contact under O-2 ambient. The IrO2 contact exhibited a high Schottky barrier height of 2.22 eV and low reverse leakage current.
Lee, JL, Han, SY, Jang, HW
core   +1 more source

The Electrical Properties of Nanoscale Parallel Semiconductor Interfaces [PDF]

open access: yes, 2002
Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed amongst high barrier height n-Si/liquid contacts.
Rossi, Robert Charles
core   +1 more source

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