Results 71 to 80 of about 1,741,103 (246)

Quantitative analysis of the Schottky interface of reduced graphene oxide Schottky diodes

Materials Research Express, 2020
A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode.
Souad Aodah, N Bano, I Hussain, Mohamad S AlSalhi   +3 more
doaj   +1 more source

DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode

, 2012
In device technology, the multilayer contacts provide improved performance. The comparative study of different high work function bilayer Schottky metal (Pt/Pd, Pt/Ni and Pt/Ti) contact has been taken to study the DC and RF performance of n-GaN Schottky ...
M.J. Abdullah, A. Abdul Aziz, T. Munir, M.F. Ain   +3 more
core   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Review of Inorganic Separator Engineering for Next‐Generation Lithium–Sulfur Batteries: Compromise or Cornerstone?

Advanced Materials, EarlyView.
Inorganic compound‐modified separators transform lithium–sulfur batteries from passive polysulfide confinement to active reaction‐pathway regulation. A Practical Relevance Index (PRI)‐guided framework bridges interfacial chemistry of inorganic separators with practical constraints, establishing unified design principles for scalable, high‐energy ...
Yuting Qin, Tianyi Wang, Xingyu Wang, Kaifu Xu, Yuzhou Wang, Chengyin Wang, Bing Sun, Guoxiu Wang   +7 more
wiley   +1 more source

Altermagnetic Schottky Contact

, 2023
Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect.
Ang, Yee Sin
core  

Directing Near‐Perfect (001) Orientation in Wafer‐Scale BiOI Thin Films via Halide‐Mediated van der Waals Stacking

Advanced Materials, EarlyView.
Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur, Ashakiran Maibam, Hayden Tuohey, Tony Nguyen, Mei Xian Low, Sumeet Walia, Zijun (June) Yong, Ravichandar Babarao, Daniel Gomez, Enrico Della Gaspera, Joel van Embden   +10 more
wiley   +1 more source

Schottky contact degradation at thermal annealing [PDF]

, 2012
Исследован процесс деградации контакта Шоттки NbN–GaAs методом измерения спектральных характеристик латеральной фотоЭДС. Результаты позволяют установить закономерную связь между формой спектральных кривых, концентрацией азота в пленке NbN и температурой ...
Венгер, Е.Ф., Готовы, И., Шеховцов, Л.В.   +2 more
core   +2 more sources

A Current Transport Mechanism on the Surface of Pd-SiO2 Mixture for Metal-Semiconductor-Metal GaAs Diodes

Advances in Materials Science and Engineering, 2013
This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal.
Shih-Wei Tan, Shih-Wen Lai
doaj   +1 more source

Reverse I–V–T analysis of Ti and Ni Schottky diodes on 6H-SiC with three contact areas [PDF]

AIP Advances
This work investigates the reverse-bias electrical behavior of Ti and Ni Schottky diodes fabricated on n-type 6H-SiC epitaxial layers, with contact areas of three different sizes: large (1.6 × 1.6 mm2), medium (1.6 × 0.4 mm2), and small (0.4 × 0.4 mm2 ...
Elhachani Bounab, Abdelaziz Rabehi, Baya Zebentout, Schahrazade Tizi, Abdullah K. Alanazi, Takele Ferede Agajie, Zineb Benamara   +6 more
doaj   +1 more source

An international survey of daily disposable contact lens prescribing

, 2013
Free to read\ud \ud Purpose\ud \ud The aim was to determine the extent of daily disposable contact lens prescribing worldwide and to characterise the associated demographics and fitting patterns.\ud \ud Methods\ud \ud Up to 1,000 survey forms were sent ...
Morgan, Philip B., Efron, Nathan, Woods, Craig A., The International Contact Lens Prescribing Survey Consortium,   +3 more
core   +1 more source