Results 1 to 10 of about 10,590 (276)

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement [PDF]

open access: yesMicromachines
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper.
Zenghui Liu   +13 more
doaj   +2 more sources

Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range [PDF]

open access: yesSensors
This paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors.
Gheorghe Pristavu   +7 more
doaj   +2 more sources

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

open access: yesIEEE Journal of the Electron Devices Society, 2021
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li   +3 more
doaj   +1 more source

A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation

open access: yesElectronics Letters, 2021
Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li   +4 more
doaj   +1 more source

Comparison between Up-Conversion Detection in Glow-Discharge Detectors and the Schottky Diode for MMW/THz High-Power Single Pulse

open access: yesApplied Sciences, 2021
Generally, glow-discharge detectors (GDD), acting on miniature neon indicator lamps, and Schottky diode detectors serve as efficient, fast, and room-temperature millimeter wave (MMW)/THz detectors.
Adnan Haj Yahya   +4 more
doaj   +1 more source

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

open access: yesMicromachines, 2022
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
doaj   +1 more source

Doping-Less SiC p-i-n Diode: Design and Investigation

open access: yesIEEE Access, 2021
We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
doaj   +1 more source

Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges

open access: yesEnergies, 2023
Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada   +4 more
doaj   +1 more source

Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor array

open access: yesResults in Physics, 2019
Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one
Fatih Gül
doaj   +1 more source

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

open access: yesSensors, 2011
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim   +3 more
doaj   +1 more source

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