Results 1 to 10 of about 10,590 (276)
Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement [PDF]
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper.
Zenghui Liu +13 more
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Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range [PDF]
This paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors.
Gheorghe Pristavu +7 more
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A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li +3 more
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Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li +4 more
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Generally, glow-discharge detectors (GDD), acting on miniature neon indicator lamps, and Schottky diode detectors serve as efficient, fast, and room-temperature millimeter wave (MMW)/THz detectors.
Adnan Haj Yahya +4 more
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This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
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Doping-Less SiC p-i-n Diode: Design and Investigation
We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
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Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada +4 more
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Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one
Fatih Gül
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A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim +3 more
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