Results 21 to 30 of about 10,590 (276)
Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
doaj
Quantitative analysis of the Schottky interface of reduced graphene oxide Schottky diodes
Materials Research Express, 2020 A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode.
Souad Aodah +3 more
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A 300 GHz balanced doubler based on planar Schottky diodes
Dianzi Jishu Yingyong, 2019 The structure and dimension of Schottky diode were designed. The loss at high frequency was reduced using a quasi-whisker contacted anode structure by a metal finger akin to an air bridge.
Zhang Lisen +6 more
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Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
IEEE Journal of the Electron Devices Society, 2020 In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2.
M. Malakoutian +4 more
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Electron trapping effects in SiC Schottky diodes: Review and comment [PDF]
, 2021 SiC devices exhibit a number of detrimental second order effects which are caused by electrically active traps. The majority of studies into traps in SiC devices have been for SiC metal-oxide-semiconductor (MOS) devices.
Nicholls, Jordan R
core +1 more source
Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors [PDF]
, 2009 Pt/nanostructured molybdenum oxide (MoO3) /SiC Schottky diode based gas sensors were fabricated for hydrogen (H2) gas sensing. Due to the enhanced performance, which is ascribed to the application of MoO3 nanostructures, these devices were used in ...
Kalantar-zadeh, Kourosh +11 more
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2012 International Electron Devices Meeting, 2012 High-performance Schottky diodes based on amorphous IGZO (Indium-Gallium-Zinc Oxide) semiconductor were fabricated and fully characterized. S-parameter measurements and subsequent analysis prove that these diodes have a cut-off frequency over 900MHz at 0V bias, making these diodes a promising choice for UHF applications, such as energy-harvesters for ...
Vaisman Chasin, Adrian Nelson +9 more
openaire +2 more sources
60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
Sensors, 2021 A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the ...
Razvan Pascu +7 more
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