Results 21 to 30 of about 174,851 (286)
Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
IEEE Journal of the Electron Devices Society, 2020 In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2.
M. Malakoutian +4 more
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2012 International Electron Devices Meeting, 2012 High-performance Schottky diodes based on amorphous IGZO (Indium-Gallium-Zinc Oxide) semiconductor were fabricated and fully characterized. S-parameter measurements and subsequent analysis prove that these diodes have a cut-off frequency over 900MHz at 0V bias, making these diodes a promising choice for UHF applications, such as energy-harvesters for ...
Vaisman Chasin, Adrian Nelson +9 more
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A 300 GHz balanced doubler based on planar Schottky diodes
Dianzi Jishu Yingyong, 2019 The structure and dimension of Schottky diode were designed. The loss at high frequency was reduced using a quasi-whisker contacted anode structure by a metal finger akin to an air bridge.
Zhang Lisen +6 more
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High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
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Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode
, 2009 We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the ...
Husain, Muhammad +2 more
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Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
, 2009 In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
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60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
Sensors, 2021 A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the ...
Razvan Pascu +7 more
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Graphene-Silicon Schottky Diodes [PDF]
Nano Letters, 2011 We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,
Chun-Chung, Chen +4 more
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