Results 21 to 30 of about 470,842 (283)
A High Current Density Direct‐Current Generator Based on a Moving van der Waals Schottky Diode [PDF]
Advances in Materials, 2018 Traditionally, Schottky diodes are used statically in the electronic information industry while dynamic or moving Schottky diode–based applications are rarely explored.
Shisheng Lin +4 more
semanticscholar +1 more source
Micromachines, 2022 This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
doaj +1 more source
Graphene-Silicon Schottky Diodes [PDF]
Nano Letters, 2011 We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,
Chun-Chung, Chen +4 more
openaire +2 more sources
Doping-Less SiC p-i-n Diode: Design and Investigation
IEEE Access, 2021 We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
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Graphene–Silicon Schottky Diodes for Photodetection [PDF]
IEEE Transactions on Nanotechnology, 2018 5 pages, 9 ...
Di Bartolomeo, Antonio +4 more
openaire +2 more sources
Energies, 2023 Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada +4 more
doaj +1 more source
Sensors, 2011 A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim +3 more
doaj +1 more source
IEEE Access, 2019 The microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes.
Xiao Zhai +4 more
doaj +1 more source
AIP Advances, 2022 Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
doaj +1 more source
Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells
Kuwait Journal of Science, 2022 Schottky diode Al/a-Se/Au as solar cells (SC) were made up by thermal evaporation technique (TET) on glass thin slide at a substrate under vacuum (vacuum value equal to mbar).
Mayyada Fdhala +4 more
doaj +1 more source