Results 1 to 10 of about 131,064 (116)
Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor [PDF]
Nanomaterials, 2023 It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices.
Siva Pratap Reddy Mallem +6 more
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Absence of Additional Stretching‐Induced Electron Scattering in Highly Conductive Cross‐linked Nanocomposites with Negligible Tunneling Barrier Height and Width [PDF]
Advanced ScienceThe intrinsic resistance of stretchable materials is dependent on strain, following Ohm's law. Here the invariable resistance of highly conductive cross‐linked nanocomposites over 53% strain is reported, where additional electron scattering is absent ...
C. Muhammed Ajmal +5 more
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Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors [PDF]
Nanomaterials, 2020 Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices.
Yonatan Vaknin +2 more
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Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals [PDF]
Beilstein Journal of Nanotechnology, 2016 A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk +5 more
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Protective Effect of Vertical Sunflower Stalk Sand Barriers Under Different Configuration Parameters
Shuitu baochi tongbao, 2023 [Objective] The influences of barrier height (H), porosity (P), and row spacing (R) on the erosion protection of a vertical sunflower sand barrier were studied in order to provide a theoretical basis for optimizing the parameter configuration of a ...
Xiangying Luo +6 more
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International Journal of Renewable Energy Development, 2022 In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell ...
Dadan Hamdani +4 more
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BARRIER HEIGHT AND CHANGING INSULATOR THICKNESS OF THIN FILM MIS JUNCTIONS [PDF]
مجلة جامعة الانبار للعلوم الصرفة, 2017 Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height ( ) increases as the thickness of the insulator
JassimMohammed Salih
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Sensors, 2021 Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with ...
Xiaolei Wang +7 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C.
Ja. A. Solovjov, V. A. Pilipenko
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Journal of New Results in Science, 2023 Diodes are exposed to radiation in many operating environments, and it is important to investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode was ...
Güven Çankaya +2 more
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