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Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]
Materials (Basel), 2022 In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping.
Jiao T +8 more
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Metal-semiconductor Schottky diode with Landauer’s formalism
Nano ExpressThe Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo +8 more
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Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
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AIP Advances, 2022 Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
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Energies, 2023 Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada +4 more
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Micromachines, 2022 This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
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Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
IEEE Journal of the Electron Devices Society, 2020 In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2.
M. Malakoutian +4 more
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Fundamental and Photodetector Application of Van Der Waals Schottky Junctions
Advanced Devices & Instrumentation, 2023 Two-dimensional (2D) materials with unique band structures have shown great potential for modern electronics and optoelectronics. The junction composed of metals and 2D van der Waals (vdW) materials, which is characterized by the Schottky barrier, is ...
Jing-Yuan Wu +3 more
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Image Force Corrections to Tung's Inhomogeneous Schottky Barrier Model
, 2021 The popular Tung model for Schottky barrier inhomogeneity considers how low-barrier patches (embedded in a high barrier background) impact the diode current. However, Tung's model fails to account for the image-force effect.
Dimitrijev, Sima, Nicholls, Jordan R
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Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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