Results 1 to 10 of about 4,564 (264)

Dirac-source diode with sub-unity ideality factor [PDF]

open access: yesNature Communications, 2022
While different types of low-power transistors have been investigated, low voltage rectifiers able to overcome the thermionic limit have not been proposed yet.
Gyuho Myeong   +13 more
doaj   +2 more sources

Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor [PDF]

open access: yesNanomaterials, 2023
It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices.
Siva Pratap Reddy Mallem   +6 more
doaj   +2 more sources

Optical and temperature dependent electrical properties of Er-/Yb-doped ZnO schottky diodes and thin films [PDF]

open access: yesScientific Reports
The study reports the fabrication of undoped and Er-/Yb-doped ZnO thin films using the sol-gel spin coating technique. The structural and optical properties of the films were analyzed using X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy.
Dechasa Tolera   +2 more
doaj   +2 more sources

Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities [PDF]

open access: yesScientific Reports
Wide bandgap semiconductors for high-power and high-frequency applications drain a lot of scientific interest. Among them AlGaN/GaN heterostructure with its related 2D electron gas is a key element for advanced microelectronics devices.
S. Milazzo   +4 more
doaj   +2 more sources

Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics

open access: yesElectronics Letters, 2023
The ideality factor of a diode gives the information on the current conduction or recombination processes occurring inside the device. The ideality factor obtained from the electrical current–voltage (I–V) characteristics by the conventional method is ...
Jaehyeok Park   +4 more
doaj   +1 more source

In-nSiC schottky photodiode ; Fabrication and Study [PDF]

open access: yesEngineering and Technology Journal, 2008
In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated .
Khalid Z. Yahiya   +2 more
doaj   +1 more source

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

open access: yesIEEE Access, 2020
Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling.
Ling-Feng Mao
doaj   +1 more source

The Opto-Electronic Characteristics of Multi-Porosity Silicon System [PDF]

open access: yesEngineering and Technology Journal, 2014
Photo-electrochemical etching with step- gradient illumination intensity was used to generate multi – porosity silicon quantum wire system (Q.W.Si) on n-type silicon wafer. A nano size photonic device of AL/Q.W.Si /si/AL was fabricated to investigate the
Alwan M.Alwan
doaj   +1 more source

Fundamental Understanding of Dye Coverage and Performance in Dye-Sensitized Solar Cells Using Copper Electrolyte

open access: yesEnergies, 2023
Dyes have played a pivotal role in the advancement of modern dye-sensitized solar cells (DSCs), as they not only facilitate light harvesting, but also serve as blocking layers to impede recombination.
Sourava Chandra Pradhan   +3 more
doaj   +1 more source

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. [PDF]

open access: yesPLoS ONE, 2016
Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures.
Hassan Maktuff Jaber Al-Ta'ii   +2 more
doaj   +1 more source

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