Results 41 to 50 of about 4,588 (264)

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

open access: yesInternational Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
doaj  

Temperature-dependent study on AlGaN-based deep ultraviolet light-emitting diode for the origin of high ideality factor

open access: yesAIP Advances, 2021
Deep ultraviolet light-emitting diodes (DUV LEDs) are promising light sources for disinfection, especially during the pandemic of novel coronavirus (COVID-19). Despite much effort in the development of DUV LEDs, the device temperature and ideality factor
Yanjun Liao   +6 more
doaj   +1 more source

Residual tail twisting in ascidian larvae is stabilized by asymmetric myofibrils that resist bilateral symmetry restoration

open access: yesFEBS Letters, EarlyView.
Ascidian Ciona larvae initially show strong clockwise tail twisting, which is largely corrected during development. However, a small residual twist remains. This study shows that organized helical myofibrils in tail muscles mechanically stabilize this residual asymmetry, preventing complete restoration of bilateral symmetry and revealing how embryos ...
Yuki S. Kogure   +3 more
wiley   +1 more source

Study of Predicting the Performance of I-V Curves Through Photoluminescence Spectral Characteristics

open access: yesIEEE Photonics Journal
Quality of GaN LEDs is closely related to the defects in quantum wells. Effectively evaluating the performance of LEDs is a key step in mass production. Electrical characterization testing is very effective for characterizing the performance of LEDs, and
Zhikun Hong   +3 more
doaj   +1 more source

VALUATION IDEAL FACTORIZATION DOMAINS

open access: yesJournal of Commutative Algebra
An integral domain $D$ is a {\em valuation ideal factorization domain} (VIFD) if each nonzero principal ideal of $D$ can be written as a finite product of valuation ideals. Clearly, $π$-domains are VIFDs. We study the ring-theoretic properties of VIFDs and the $*$-operation analogs of VIFDs.
Chang, Gyu Whan, Reinhart, Andreas
openaire   +2 more sources

Investigating transcription factor dynamics in health and disease using FRAP

open access: yesFEBS Letters, EarlyView.
FRAP analysis of GFP‐tagged transcription factors reveals how molecular mobility and target engagement change in response to drug treatment. By combining live‐cell imaging, quantitative model fitting, and statistical analysis, this approach uncovers transcription factor dynamics linked to disease mechanisms, providing a powerful framework for ...
Kannan Govindaraj   +3 more
wiley   +1 more source

Structure‐forward targeting of claudins with synthetic binders

open access: yesFEBS Letters, EarlyView.
Claudins form the paracellular barriers between epithelial and endothelial tissues at tight junctions and are targets for molecular binders with the goal of modulating barrier permeability. Claudin‐binding molecules are relevant in drug delivery or in altering claudin interactions with disease‐causing proteins.
Alex J. Vecchio
wiley   +1 more source

The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes

open access: yesInternational Journal of Energetica, 2020
In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature.
Ali Sadoun   +3 more
doaj  

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

open access: yesInternational Journal of Photoenergy, 2016
Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure.
Şadan Özden, Cem Tozlu, Osman Pakma
doaj   +1 more source

Home - About - Disclaimer - Privacy