Results 1 to 10 of about 1,488,769 (288)
Improved Hydrogen-Sensing of TiO2 Schottky Device Through Schottky Barrier Height Modulation [PDF]
SensorsAdjusting the Schottky barrier height is an important approach to enhancing the gas-sensing performance of TiO2 Schottky sensors. In this study, micro TiO2 nanotube Schottky sensors were fabricated via magnetron sputtering and anodic oxidation, with ...
Xiaochuan Long +4 more
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Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors [PDF]
Nanomaterials, 2020 Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices.
Yonatan Vaknin +2 more
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Drift of Schottky Barrier Height in Phase Change Materials. [PDF]
ACS NanoPhase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their practical use is hampered by resistance drift, a phenomenon commonly attributed to structural relaxation or electronic mechanisms primarily in the context of bulk effects.
Nir-Harwood RG +10 more
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A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
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AIP Advances, 2021 It is generally believed that the resistance degradation behavior of bulk and thin-film oxide capacitors arises from the oxygen vacancy migration within the oxide and/or the charge injection at the oxide/electrode interface.
Feng Xue
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AIP Advances, 2022 Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara +5 more
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Effects of alloy disorder on Schottky-barrier heights [PDF]
Physical Review B, 1987 The effects of alloy disorder on the Schottky barriers at semiconductor-alloy\char21{}metal interfaces are investigated within the defect model of Schottky-barrier formation. The deep levels and the associated wave functions for surface antisite defects, which are believed to be responsible for the barriers considered here, were previously calculated ...
MYLES, CW +3 more
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Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]
Journal of Nanostructures, 2012 A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
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Modulation of barrier height in n-type GaN Schottky structure with ultrathin oxide interlayer mediated by dipole formation [PDF]
APL Electronic DevicesThe effect on the barrier height of inserting ultrathin oxide (GaOx) interlayers at n-type GaN Schottky contacts was systematically investigated. Inserting interlayers (>0.5nm) between GaN and electrode metals having relatively low electronegativities ...
Masahiro Hara +4 more
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Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot [PDF]
Журнал нано- та електронної фізики, 2016 The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K.
J.M. Dhimmar, H.N. Desai, B.P. Modi
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