Results 1 to 10 of about 70 (70)
Effects of alloy disorder on Schottky-barrier heights [PDF]
Physical Review B, 1987 The effects of alloy disorder on the Schottky barriers at semiconductor-alloy\char21{}metal interfaces are investigated within the defect model of Schottky-barrier formation. The deep levels and the associated wave functions for surface antisite defects, which are believed to be responsible for the barriers considered here, were previously calculated ...
MYLES, CW +3 more
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The physics and chemistry of the Schottky barrier height [PDF]
Applied Physics Reviews, 2014 The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces.
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Band gap and Schottky barrier heights of multiferroic BiFeO3 [PDF]
Applied Physics Letters, 2007 Bi Fe O 3 is an interesting multiferroic oxide and a potentially important Pb-free ferroelectric. However, its applications can be limited by large leakage currents. Its band gap is calculated by the density-functional based screened exchange method to be 2.8eV, similar to experiment.
Clark, S.J., Robertson, J.
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Optimum Barrier Height for SiC Schottky Barrier Diode
ISRN Electronics, 2013 The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation
Alaa El-Din Sayed Hafez +1 more
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Tuning the Schottky Barrier Height for Future CMOS [PDF]
ECS Meeting Abstracts, 2006 Abstract not Available.
Zhen Zhang, Shi-Li Zhang
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Au/InSe Schottky barrier height determination [PDF]
Revue de Physique Appliquée, 1990 Au/InSe interface formation was studied and a microscopic Schottky barrier of 0.7 eV was measured in accordance with the value obtained by I( V) and photovoltage measurements. This barrier is formed for submonolayer coverage before any chemical reaction or interdiffusion is evidenced.
Mamy, R. +3 more
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Drift of Schottky Barrier Height in Phase Change Materials
ACS NanoPhase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their practical use is hampered by resistance drift, a phenomenon commonly attributed to structural relaxation or electronic mechanisms primarily in the context of bulk effects.
Rivka-Galya Nir-Harwood +10 more
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A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon
Журнал нано- та електронної фізики, 2011 The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height Φbe increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1 ...
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Schottky barrier height enhancement on n-ln0.53Ga0.47
, 1992 Lüth, H. +3 more
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Some of the next articles are maybe not open access.
Quantitative explanation of the Schottky barrier height
Physical Review B, 2021Eight decades ago, Schottky proposed that the energy barrier at the metal-semiconductor interface, which now bears his name, should be compared with the difference of two surface quantities, the work function (WF) of the metal and the ionization potential of the semiconductor.
Raymond T. Tung, Leeor Kronik
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