Results 21 to 30 of about 8,512 (209)

The Electrical Properties of Nanoscale Parallel Semiconductor Interfaces [PDF]

, 2002
Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed amongst high barrier height n-Si/liquid contacts.
Rossi, Robert Charles
core   +1 more source

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

Nanoscale Research Letters, 2020
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang, Yixian Shen, Qian Feng, Xusheng Tian, Yuncong Cai, Zhuangzhuang Hu, Guangshuo Yan, Zhaoqing Feng, Yachao Zhang, Jing Ning, Yongkuan Xu, Xiaozheng Lian, Xiaojuan Sun, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +16 more
doaj   +1 more source

Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate

Photonics, 2021
GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively.
Fangzhou Liang, Wen Chen, Meixin Feng, Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Qibao Wu, Hui Yang   +9 more
doaj   +1 more source

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

IEEE Journal of the Electron Devices Society, 2020
In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu, Kailu Ma, Yicheng Wang, Meile Wu, Jong-Ho Lee, Xiaoshi Jin   +5 more
doaj   +1 more source

Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

IEEE Journal of the Electron Devices Society, 2017
Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj   +1 more source

EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C.
Ja. A. Solovjov, V. A. Pilipenko
doaj   +1 more source

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Nanomaterials, 2018
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their
Moonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, Eun Kyu Kim, Sungsoo Park   +4 more
doaj   +1 more source

Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [PDF]

Журнал нано- та електронної фізики, 2011
We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
N. Nanda Kumar Reddy, V. Rajagopal Reddy
doaj  

Temperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates [PDF]

APL Electronic Devices
High-current-density (>1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition.
Bingcheng Da, Fikadu Alema, Junzhe Xie, Will Brand, Vitali Soukhoveev, Dawei Wang, Xianzhi Wei, Dinusha Herath Mudiyanselage, Andrei Osinsky, Houqiang Fu   +9 more
doaj   +1 more source

The Research of Influence of the Barrier Transition Parameters Determination Methods on their Accuracy [PDF]

Журнал нано- та електронної фізики, 2017
The accuracy of the main qualitative barrier transitions characteristics (barrier height пЃЄb and nonideality factor О·) depends on the accuracy of the measurement as the current and voltage as their determination method.
V.S.В Dmitriev
doaj   +1 more source