Results 21 to 30 of about 1,488,769 (288)
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C.
Ja. A. Solovjov, V. A. Pilipenko
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MXenes Contacts for p-type 2D Electronics. [PDF]
Adv Sci (Weinh)Solution‐processed MXene contacts are engineered for p‐type 2H‐MoTe2 transistors. By comparing Ti3C2Tx, Nb2CTx, and Mo2CTx, Nb2CTx is identified as the best‐performing contact among the MXenes examined in this work, offering favorable work‐function alignment, low contact resistance, and near‐ohmic hole injection for scalable 2D electronics.
Guo T +12 more
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Schottky barrier height enhancement on n-In0.53Ga0.47As
Journal of Applied Physics, 1992 Schottky barrier height enhancement on n-InGaAs is studied on structures with thin surface layers of different compositions. Counter-doped p+-InGaAs layers, as well as layers of n- and p-InP, n-GaAs, and n-InGaP of different thicknesses and dopant densities, respectively, were used to enhance the barrier. Titanium was used as a barrier metal to prepare
Lüth, H. +3 more
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Nanomaterials, 2018 We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their
Moonsang Lee +4 more
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The physics and chemistry of the Schottky barrier height [PDF]
Applied Physics Reviews, 2014 The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces.
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High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
N. Nanda Kumar Reddy, V. Rajagopal Reddy
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Temperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates [PDF]
APL Electronic DevicesHigh-current-density (>1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition.
Bingcheng Da +9 more
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A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
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