Results 41 to 50 of about 8,512 (209)
, 2019 Attempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects.
Nicholls, Jordan +3 more
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Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions
, 2011 The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200-500 K. The barrier height and the ideality factor were calculated from current-voltage (I-V) characteristics based ...
Krupanidhi, SB +13 more
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Schottky Contact of Gallium on p-Type Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj
Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
Results in Physics, 2016 The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K.
N.A. Al-Ahmadi, H.A. Al-Jawhari
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Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure
Heliyon, 2023 The two-dimensional MoSi2N4 monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability.
Jinglin Xia +7 more
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Nanophotonics, 2021 MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface.
Yang Changming +6 more
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Journal of Materials Research and Technology, 2022 A 3-terminal device with a tunable Schottky barrier controls the charge transport across a vertically stacked structure named “barristor”- one composed of a graphene/rhenium diselenide (ReSe2) p-n heterojunction to exploit the advantages of the high ...
Thi Phuong-Anh Bach +7 more
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Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
AIP Advances, 2019 The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode.
Yoshihiro Shimazu +2 more
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Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission
, 2002 We present the Schottky-barrier height determination for the Fe/ZnSe(001) system performed by core and valence level photoelectron emission spectroscopy.
Eddrief, Mahmoud +15 more
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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts
AIP Advances, 2019 The interface between a metal and a semiconductor is known as Schottky contact and a key factor in semiconductor technologies. Those interfaces normally build an energetic barrier, which is responsible for the exponential current voltage dependence ...
C. Funck, S. Menzel
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