Results 51 to 60 of about 8,512 (209)
Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Applied Sciences, 2019 Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces,
Jules Courtin +7 more
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Schottky barrier height at the Au/porous silicon interface
, 1998 The Schottky barrier height at the Au/porous silicon interface has been studied with ballistic electron emission microscopy (BEEM). The porous silicon thin films were prepared by laser ablation.
Ke, M. +3 more
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Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications
, 2020 International audienceIn this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky ...
Frederic Gianesello +15 more
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四川大学学报. 自然科学版, 2017 The SOI strained silicon schottky source/drain MOSFET with high-k gate dielectric is a potential device realizing small size MOSFET, which combines the advantages of strained silicon engineering, high-k gate dielectric, SOI structure and schottky source ...
XU Li-Jun, ZHANG He-Ming, YANG Jin-Yong
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Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes
, 2009 We have reported a study of a number of metal/p-type InP (Cu, Au, Al, Sn, Pb, Ti, Zn) Schottky barrier diodes (SBDs). Each one diode has been identically prepared on p-InP under vacuum conditions with metal deposition.
Turut, A., Asubay, S., Gullu, O.
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, 1999 Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system.
C. Y. Chang +6 more
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Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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The Schottky barrier height at the CoSi2/Si(111) interface
, 1988 The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theory. It is found that the barrier height is 0.55 eV for the model with fivefold-coordinated Co atoms at the interface and 0.13 eV for the model with ...
Matthai, Clarence Cherian, Rees, N. V.
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SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS
, 1993 The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K.
AKMAN, N, TURAN, R, Turan, Raşit
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International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
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