Results 31 to 40 of about 8,512 (209)

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

IEEE Journal of the Electron Devices Society
Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee, Yoon-Jeong Kim, Seokhoon Ahn, Dae-Young Jeon   +3 more
doaj   +1 more source

Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes [PDF]

Журнал нано- та електронної фізики, 2012
We report on the temperature-dependent electrical characteristics and deep level transient spectroscopy (DLTS) of the Ni/V/n-InP Schottky diodes in the temperature range of 180-420 K.
V.Rajagopal Reddy, S.Sankar Naik
doaj  

Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy

AIP Advances, 2023
Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors.
Abdul K. Rumaiz, Conan Weiland, Ian Harding, Neha S. Nooman, Thomas Krings, Ethan L. Hull, Gabriele Giacomini, Wei Chen, Eric Cockayne, D. Peter Siddons, Joseph C. Woicik   +10 more
doaj   +1 more source

Tunable Schottky barrier height and surface potential by using hydrogen ions

, 2014
In this research work, hydrogen ion can be used for Schottky barrier height and surface potential tuning with specific power. The current output of Ohmic and Schottky contacted device would be enhanced from 8.25 μA to 171 μA and 2.84 pA to 1.3 μA ...
Yeh, P. H., Hsu, J. K.; Lin, T. Y.; Lai, C. Y.; Chien, T. C.; Song, J. H.; Yeh, P. H.   +1 more
core   +1 more source

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]

Журнал нано- та електронної фізики, 2011
We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy, B. Prasanna Lakshmi, A. Ashok Kumar, V. Rajagopal Reddy   +3 more
doaj  

Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes [PDF]

The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K.
Henini, M.
core   +1 more source

Improved Hydrogen-Sensing of TiO₂ Schottky Device Through Schottky Barrier Height Modulation

Sensors
Adjusting the Schottky barrier height is an important approach to enhancing the gas-sensing performance of TiO2 Schottky sensors. In this study, micro TiO2 nanotube Schottky sensors were fabricated via magnetron sputtering and anodic oxidation, with ...
Xiaochuan Long, Xiao Zhang, Zheng Lu, Feng Wei, Xiaopeng Liu   +4 more
doaj   +1 more source

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Heliyon, 2020
The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al0.33Ga0.67 As diodes have been examined through the inhomogeneity model on n+-GaAs substrate with orientation.
Noorah Ahmed Al-Ahmadi
doaj   +1 more source

Interface and Transport Properties of Fe/GaAs(001) Heterostructures [PDF]

, 2012
Fe/GaAs(001) is one of the leading candidate systems for achieving efficient spin-polarised injection. Although there have been numerous studies on the magnetotransport properties of Fe/GaAs(001) systems there is relatively little knowledge of the ...
Fleet, Luke Roger, Fleet, Luke
core