Results 31 to 40 of about 1,488,769 (288)
The Research of Influence of the Barrier Transition Parameters Determination Methods on their Accuracy [PDF]
Журнал нано- та електронної фізики, 2017 The accuracy of the main qualitative barrier transitions characteristics (barrier height пЃЄb and nonideality factor О·) depends on the accuracy of the measurement as the current and voltage as their determination method.
V.S.В Dmitriev
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The Electrical Properties of Nanoscale Parallel Semiconductor Interfaces [PDF]
, 2002 Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed amongst high barrier height n-Si/liquid contacts.
Rossi, Robert Charles
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Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
, 2009 In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
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Band gap and Schottky barrier heights of multiferroic BiFeO3 [PDF]
Applied Physics Letters, 2007 Bi Fe O 3 is an interesting multiferroic oxide and a potentially important Pb-free ferroelectric. However, its applications can be limited by large leakage currents. Its band gap is calculated by the density-functional based screened exchange method to be 2.8eV, similar to experiment.
Clark, S.J., Robertson, J.
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IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
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Electrodeposition of Ni-Si Schottky barriers [PDF]
, 2005 Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities.
P.A.J. de Groot +13 more
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Barrier height tuning in Ti/4H-SiC Schottky diodes
, 2021 In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been
Bassi, A. +6 more
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The contacts between two-dimensional materials and metal electrodes
Nano ResearchThe advent of two-dimensional (2D) materials has ushered in a new era for electronic and optoelectronic devices. However, their atomic-scale thickness presents a fundamental contact interface challenge: the formation of a Schottky barrier at the 2D ...
Yingpeng Gao +6 more
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Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes [PDF]
Журнал нано- та електронної фізики, 2012 We report on the temperature-dependent electrical characteristics and deep level transient spectroscopy (DLTS) of the Ni/V/n-InP Schottky diodes in the temperature range of 180-420 K.
V.Rajagopal Reddy, S.Sankar Naik
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AIP Advances, 2023 Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors.
Abdul K. Rumaiz +10 more
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