Results 11 to 20 of about 1,488,769 (288)
Interface and Transport Properties of Fe/GaAs(001) Heterostructures [PDF]
, 2012 Fe/GaAs(001) is one of the leading candidate systems for achieving efficient spin-polarised injection. Although there have been numerous studies on the magnetotransport properties of Fe/GaAs(001) systems there is relatively little knowledge of the ...
Fleet, Luke
core +6 more sources
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
core +1 more source
A low Schottky barrier height and transport mechanism in gold-graphene-silicon (001) heterojunctions. [PDF]
Nanoscale Adv, 2019 International audienceThe interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height.
Courtin J +9 more
europepmc +2 more sources
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source
Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
doaj +1 more source
AIP Advances, 2021 Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of ...
Keito Aoshima, Masahiro Horita, Jun Suda
doaj +1 more source
Photonics, 2021 GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively.
Fangzhou Liang +9 more
doaj +1 more source
The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
Nanoscale Research Letters, 2020 In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang +16 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2020 In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu +5 more
doaj +1 more source
Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts
IEEE Journal of the Electron Devices Society, 2017 Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj +1 more source