Results 11 to 20 of about 8,512 (209)
Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors [PDF]
Nanomaterials, 2020 Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices.
Yonatan Vaknin +2 more
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A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions [PDF]
Nanoscale Adv, 2019 International audienceThe interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height.
Tricot, Sylvain +10 more
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Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
S. Nagarajan +9 more
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AIP Advances, 2021 It is generally believed that the resistance degradation behavior of bulk and thin-film oxide capacitors arises from the oxygen vacancy migration within the oxide and/or the charge injection at the oxide/electrode interface.
Feng Xue
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AIP Advances, 2022 Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara +5 more
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Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]
Journal of Nanostructures, 2012 A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot [PDF]
Журнал нано- та електронної фізики, 2016 The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K.
J.M. Dhimmar, H.N. Desai, B.P. Modi
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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AIP Advances, 2021 Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of ...
Keito Aoshima, Masahiro Horita, Jun Suda
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