Results 61 to 70 of about 1,488,769 (288)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad

AIP Advances, 2019
The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode.
Yoshihiro Shimazu, Tatsuya Iwabuchi, Kensuke Arai   +2 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts

AIP Advances, 2019
The interface between a metal and a semiconductor is known as Schottky contact and a key factor in semiconductor technologies. Those interfaces normally build an energetic barrier, which is responsible for the exponential current voltage dependence ...
C. Funck, S. Menzel
doaj   +1 more source

Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

Applied Sciences, 2019
Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces,
Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot, Pascal Turban, Philippe Schieffer, Jean-Christophe Le Breton   +7 more
doaj   +1 more source

Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode

, 2009
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the ...
Husain, Muhammad, Li, Xiaoli V., de Groot, Cornelis H.   +2 more
core   +1 more source

Electrocatalyst/Semiconductor Interfaces in Photoelectrocatalysts: Mechanistic Analysis of the Impact of Nanoparticle Electrocatalyst Coverage on Performance

Advanced Materials, EarlyView.
Reducing Ni nanoparticle coverage on n‐Si photoanodes enhances photovoltage by promoting thicker interfacial SiOx formation during photoelectrochemical oxygen evolution reaction (OER). Experiments, analytical modeling, and finite‐element simulations reveal that coverage‐dependent chemical interface evolution, rather than geometric effects alone ...
Aarti Mathur, Ahmet Sert, Suljo Linic
wiley   +1 more source

The Research of Drain Induced Barrier Lower Effect for SOI Strained Silicon Schottky Source/Drain MOSFET with High-k Gate Dielectric

四川大学学报. 自然科学版, 2017
The SOI strained silicon schottky source/drain MOSFET with high-k gate dielectric is a potential device realizing small size MOSFET, which combines the advantages of strained silicon engineering, high-k gate dielectric, SOI structure and schottky source ...
XU Li-Jun, ZHANG He-Ming, YANG Jin-Yong
doaj  

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI₃ Thin Single-Crystal Devices. [PDF]

Adv Sci (Weinh)
Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Durante O, Demontis V, De Stefano S, Matta S, Mazzotti A, Marongiu D, Meloni E, Pili E, Liu F, Sestu N, Simbula A, Carta M, Saba M, Mura A, Di Ventra M, Bongiovanni G, Di Bartolomeo A.   +16 more
europepmc   +2 more sources