Results 61 to 70 of about 8,512 (209)
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
, 2009 In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core
The Schottky barrier height at the NiSi2-Si(111) interface
, 1989 The authors have calculated the Schottky barrier heights for the type A and type B NiSi2-Si(111) interfaces. They have found that varying the amount of relaxation of the NiSi2-Si interplanar distance at the type B interface leads to a change in the ...
Matthai, Clarence Cherian, Rees, N. V.
core +1 more source
An Analytical Drain Current Model for Surrounding-Gate Schottky Barrier MOSFET
四川大学学报. 自然科学版, 2017 The current of Schottky barrier metal-oxide-semiconductor field-effect transistor (MOSFET) is popularly calculated through the integration of Fermi-Dirac distribution for carrier over energy or self consistent iterative numerical calculation. In order to
XU Li-Jun, ZHANG He-Ming, YANG Jin-Yong
doaj
Sensors, 2011 A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim +3 more
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Analysis of barrier height inhomogeneities in Al-pSnSe Schottky diode
, 2012 The fabrication of Al-pSnSe Schottky diodes and the temperature dependence of I-V characteristics in the temperature range 60
K.D. Patel, C.K. Sumesh
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Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes [PDF]
, 2017 In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/
Fred Hurkx +12 more
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Applied Sciences, 2019 Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes.
Rahimah Mohd Saman +5 more
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Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
IEEE Journal of the Electron Devices Society, 2020 Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates.
Tsung-Han Yang +10 more
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Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
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Reducing the Barrier Height in Organic Transistors
Advanced Electronic MaterialsReducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi +7 more
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