Results 81 to 90 of about 1,488,769 (288)
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
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Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
Advanced Materials Technologies, EarlyView.In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source
Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications
Advanced Materials Technologies, EarlyView.This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo +2 more
wiley +1 more source
Advanced Science, EarlyView.This study employs a nanochain engineering approach combined with an in situ oxidation strategy to fabricate self‐insulating iron‐based magnetic nanochains, addressing the challenge of balancing magnetic coupling and electrical insulation in soft magnetic materials.
Dingrong Zuo +8 more
wiley +1 more source
An Analytical Drain Current Model for Surrounding-Gate Schottky Barrier MOSFET
四川大学学报. 自然科学版, 2017 The current of Schottky barrier metal-oxide-semiconductor field-effect transistor (MOSFET) is popularly calculated through the integration of Fermi-Dirac distribution for carrier over energy or self consistent iterative numerical calculation. In order to
XU Li-Jun, ZHANG He-Ming, YANG Jin-Yong
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Sensors, 2011 A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim +3 more
doaj +1 more source
Advanced Science, EarlyView.Laser‐induced graphene (LIG) provides a scalable, laser‐direct‐written route to porous graphene architecture with tunable chemistry and defect density. Through heterojunction engineering, catalytic functionalization, and intrinsic self‐heating, LIG achieves highly sensitive and selective detection of NOX, NH3, H2, and humidity, supporting next ...
Md Abu Sayeed Biswas +6 more
wiley +1 more source
Applied Sciences, 2019 Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes.
Rahimah Mohd Saman +5 more
doaj +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
doaj +1 more source