Results 81 to 90 of about 8,512 (209)

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study. [PDF]

Sci Rep, 2022
Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW.   +4 more
europepmc   +1 more source

Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100) Schottky Barrier diodes

, 2014
The current voltage (I-V) measurements of Au/n-GaP Schottky barrier diodes (SBD) were carried out in the temperature range of 80-375 K. The values of zero-bias barrier height (phi(B0)) and ideality factor (n) ranged from 0.29 eV and 3.85 (80K) to 0.82 eV
Ahmetoglu (Afrailov), M., Ozer, M., Guzel, T., Asimov, A.   +3 more
core   +1 more source

Spintronic and plasmonic applications of electrodeposition on semiconductors

, 2009
In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, Xiaoli, Li, X.
core  

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

, 2009
Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current-voltage (I-V) measurements, with some also measured as a function of temperature.
Bolen, M L, Capano, Michael A
core   +1 more source

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study. [PDF]

Sci Rep, 2022
Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW.   +4 more
europepmc   +1 more source

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe₂ van der Waals Heterostructures for Excellent Photodetector and NO₂ Gas Sensing Applications. [PDF]

Nanomaterials (Basel), 2022
Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU.   +8 more
europepmc   +1 more source

Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes

, 2010
Some parameters of Ag/p-GaSe:Gd Schottky barrier diodes have been investigated by means of current-voltage and capacitance-voltage measurements at room temperature.
Dogan, S., Gurbulak, Bekir, Duman, S., Tekle, T. Bahtiyari   +3 more
core   +1 more source

Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

, 2004
The current-voltage (I-V) measurements on Ag/p-Si Schottky barrier diodes in the temperature range 125-300 K were carried out. The I-V analysis based on the thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and ...
Selcuk, AB, Karadeniz, S, Tugluoglu, N, ACAR, SELİM, Kasap, MEHMET   +4 more
core   +1 more source

The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact

Materials Research Express
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang, Yapeng Li, Jiqiang Jia, Zhaoyu Luo   +3 more
doaj   +1 more source

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au β-Ga₂O₃ Schottky Barrier Diodes

Micromachines
In this work, the electrical properties of the Ga2O3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β-Ga2O3 surface resulted in ...
Lei Xie, Tao Zhang, Shengrui Xu, Huake Su, Hongchang Tao, Yuan Gao, Xu Liu, Jincheng Zhang, Yue Hao   +8 more
doaj   +1 more source