Results 91 to 100 of about 8,512 (209)

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2022
Chakraborty S, Kim TW.
europepmc   +1 more source

Impact Factors on the Performance of Schottky Barrier MOSFETs with Asymmetric Barrier Height at Source/Drain

, 2008
The performance of the n-channel Schottky barrier MOSFET with asymmetric barrier height at source/drain (A-SBFET) was numerically simulated. The impact factors on the performance are studied.
Han Ru-Qi, Sun Lei, Liu Xiao-Yan, Du Xiong-Xiong   +3 more
core   +1 more source

Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes

, 2019
Schottky characteristics of nanocrystalline graphite/p-Si junction were investigated using current-voltage measurements at various temperatures between 298 and 473 K.
Hui, Pu Suan, Nawawi, Azfar Abid, Sultan, Suhana Mohamed, Rahman, Shaharin Fadzli Abd   +3 more
core   +2 more sources

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

, 2012
An ultrathin yttrium oxide (Y2O3) film is introduced at the metal/n-Ge interface for modulating the Schottky barrier height. The experimental results show that the thin Y2O3 film can effectively alleviate the Fermi level pinning and electron Schottky ...
Lin, Meng, Zhang, Xing, Li, Zhiqiang, An, Xia, Huang, Ru, Yun, Quanxin   +5 more
core   +1 more source

A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. [PDF]

Nanomaterials (Basel), 2021
Kaufmann IR, Zerey O, Meyers T, Reker J, Vidor F, Hilleringmann U.   +5 more
europepmc   +1 more source

Printed Silver Electrode for Silicon-based Schottky Barrier Diode: High Rectification Ratio Enabled by Ag/p-Si Interface Exceeds Theoretical Barrier Height

, 2020
The printed electronics enables the fabrication of a variety of devices and is becoming important as critical techniques for some applications in diverse areas.
Toshiyuki, Tamai, Masashi, Saitoh
core   +1 more source

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth. [PDF]

Nanoscale Adv, 2023
Menon H, Jeddi H, Morgan NP, Fontcuberta I Morral A, Pettersson H, Borg M.   +5 more
europepmc   +1 more source

Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

, 2011
We performed the electrochemical deposition of ZnO on 4H-SiC epilayers and characterized Schottky diodes fabricated on the same epilayers in order to find the positions of defects that cause the low Schottky barrier height.
Hidenori Ono, Masaya Ichimura, Masashi Kato, Gan Feng, Tsunenobu Kimoto   +4 more
core   +1 more source

Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique

, 2010
In this paper, a method of ion-implantation after germanidation (IAG) has been presented to modulate the Schottky barrier (SB) heights on germanium substrates.
Ru Huang, Xia An, Zhang, Xing, Xing Zhang, Guo, Yue, Fan, Chunhui, An, Xia, Yue Guo, Huang, Ru, Chunhui Fan   +9 more
core   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source